TPB65R135MFD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPB65R135MFD
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 219 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 30 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 45 nS
Cossⓘ - Capacitancia de salida: 83 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.135 Ohm
Paquete / Cubierta: TO263
Búsqueda de reemplazo de TPB65R135MFD MOSFET
TPB65R135MFD Datasheet (PDF)
tpb65r135mfd tpp65r135mfd tpw65r135mfd.pdf

TPB65R135MFD,TPP65R135MFD,TPW65R135MFDWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide an
tpa65r170m tpb65r170m tpc65r170m tpp65r170m tpv65r170m tpw65r170m.pdf

TPA65R170M,TPB65R170M,TPC65R170M,TPP65R170M,TPV65R170M,TPW65R170MWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDESCRIPTION650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication
tpb65r120m tpp65r120m tpr65r120m tpw65r120m.pdf

TPB65R120M,TPP65R120M,TPR65R120M,TPW65R120MWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses de
tpa65r160c tpb65r160c tpp65r160c tpr65r160c tpv65r160c.pdf

TPA65R160C,TPB65R160C,TPP65R160C,TPR65R160C,TPV65R160CWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduct
Otros transistores... TPU80R750C , TPB65R075DFD , TPP65R075DFD , TPW65R075DFD , TPB65R120M , TPP65R120M , TPR65R120M , TPW65R120M , IRF540N , TPP65R135MFD , TPW65R135MFD , TPB70R950M , TPD70R950M , TPD50R3K8D , TPD60R1K4M , TPU60R1K4M , TPD60R1K5MFD .
History: HFP13N50U | SL2301S | HM50N10K | HMS17N65D | AP9569GJ-HF | KI5402DC | HMS18N10D
History: HFP13N50U | SL2301S | HM50N10K | HMS17N65D | AP9569GJ-HF | KI5402DC | HMS18N10D



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AP30N10D | AP30N06Y | AP30N06DF | AP30N06D | AP30N03DF | AP30N02D | AP30H04NF | AP30H04DF | AP30G03GD | AP300N04TLG5 | AP2P15MI | AP2N7002A | AP2N30MI | AP2N20MI | AP280N10MP | AP20G03GD
Popular searches
bc547 transistor | bd139 | 2n4401 datasheet | irf640 | irf840 | irf740 | c945 transistor | irf640n