TPB65R135MFD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPB65R135MFD
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 219 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 30 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 45 nS
Cossⓘ - Capacitancia de salida: 83 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.135 Ohm
Paquete / Cubierta: TO263
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TPB65R135MFD Datasheet (PDF)
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Otros transistores... TPU80R750C , TPB65R075DFD , TPP65R075DFD , TPW65R075DFD , TPB65R120M , TPP65R120M , TPR65R120M , TPW65R120M , IRF540 , TPP65R135MFD , TPW65R135MFD , TPB70R950M , TPD70R950M , TPD50R3K8D , TPD60R1K4M , TPU60R1K4M , TPD60R1K5MFD .
History: SSM6N44FE | 2SK4069-ZK-E1-AY | URFP150 | AP9575AGS-HF | BLS7G2729LS-350P | AP5322GM | JCS740RC
History: SSM6N44FE | 2SK4069-ZK-E1-AY | URFP150 | AP9575AGS-HF | BLS7G2729LS-350P | AP5322GM | JCS740RC



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