TPB65R135MFD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPB65R135MFD
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 219 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 30 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 45 nS
Cossⓘ - Capacitancia de salida: 83 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.135 Ohm
Paquete / Cubierta: TO263
- Selección de transistores por parámetros
TPB65R135MFD Datasheet (PDF)
tpb65r135mfd tpp65r135mfd tpw65r135mfd.pdf

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TPA65R160C,TPB65R160C,TPP65R160C,TPR65R160C,TPV65R160CWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduct
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: IPD60R2K0C6 | STK28N3LLH5 | IRF7103PBF | IPD12CN10NG | NVMFS020N06C | WSD2012DN25 | NCEAP40T17AD
History: IPD60R2K0C6 | STK28N3LLH5 | IRF7103PBF | IPD12CN10NG | NVMFS020N06C | WSD2012DN25 | NCEAP40T17AD



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