TPD50R3K8D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TPD50R3K8D

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 5.4 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 1 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8.6 nS

Cossⓘ - Capacitancia de salida: 3.6 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 3.8 Ohm

Encapsulados: TO252

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TPD50R3K8D datasheet

 ..1. Size:577K  cn wuxi unigroup
 tpd50r3k8d.pdf pdf_icon

TPD50R3K8D

TPD50R3K8D Wuxi Unigroup Microelectronics Co.,Ltd 500V Super-junction Power MOSFET Description 500V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs designed according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losses device with highest robustness

 8.1. Size:739K  cn wuxi unigroup
 tpp50r250c tpa50r250c tpu50r250c tpd50r250c tpc50r250c tpb50r250c.pdf pdf_icon

TPD50R3K8D

TPP50R250C, TPA50R250C, TPU50R250C, TPD50R250C, TPC50R250C, TPB50R250C Wuxi Unigroup Microelectronics Company 500V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on) Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package

 8.2. Size:744K  cn wuxi unigroup
 tpp50r400c tpa50r400c tpu50r400c tpd50r400c tpc50r400c tpb50r400c.pdf pdf_icon

TPD50R3K8D

TPP50R400C, TPA50R400C, TPU50R400C, TPD50R400C, TPC50R400C,TPB50R400C Wuxi Unigroup Microelectronics Company 500V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on) Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package

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