TPD65R700MFD Todos los transistores

 

TPD65R700MFD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TPD65R700MFD
   Código: 65R700MFD
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 63 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 14 nC
   trⓘ - Tiempo de subida: 62 nS
   Cossⓘ - Capacitancia de salida: 24 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.7 Ohm
   Paquete / Cubierta: TO252

 Búsqueda de reemplazo de MOSFET TPD65R700MFD

 

TPD65R700MFD Datasheet (PDF)

 ..1. Size:567K  cn wuxi unigroup
tpd65r700mfd.pdf

TPD65R700MFD
TPD65R700MFD

TPD65R700MFDWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide an extremely low switching,

 7.1. Size:758K  cn wuxi unigroup
tpa65r750c tpb65r750c tpc65r750c tpd65r750c tpp65r750c tpu65r750c.pdf

TPD65R700MFD
TPD65R700MFD

TPA65R750C, TPB65R750C, TPC65R750C, TPD65R750C, TPP65R750C, TPU65R750C Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package

 8.1. Size:473K  cn wuxi unigroup
tpd65r520d.pdf

TPD65R700MFD
TPD65R700MFD

TPD65R520D Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET DESCRIPTION 650V super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The SJ MOSFET is a price-performance optimized product enabling to target cost sensitive applications in Consumer and Ligh

 8.2. Size:1239K  cn wuxi unigroup
tpa65r360m tpb65r360m tpc65r360m tpd65r360m tpp65r360m tpr65r360m tpu65r360m.pdf

TPD65R700MFD
TPD65R700MFD

TPA65R360M,TPB65R360M,TPC65R360M,TPD65R360M,TPP65R360M,TPR65R360M,TPU65R360MWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, com

 8.3. Size:748K  cn wuxi unigroup
tpa65r950m tpd65r950m.pdf

TPD65R700MFD
TPD65R700MFD

TPA65R950M,TPD65R950MWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses device with highest ro

 8.4. Size:741K  cn wuxi unigroup
tpp65r600c tpa65r600c tpu65r600c tpd65r600c tpc65r600c tpb65r600c.pdf

TPD65R700MFD
TPD65R700MFD

TPP65R600C, TPA65R600C, TPU65R600C, TPD65R600C, TPC65R600C, TPB65R600C Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package

 8.5. Size:705K  cn wuxi unigroup
tpa65r380d tpd65r380d.pdf

TPD65R700MFD
TPD65R700MFD

TPA65R380D,TPD65R380DWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losses device with highest

 8.6. Size:515K  cn wuxi unigroup
tpp65r940c tpa65r940c tpu65r940c tpd65r940c tpc65r940c tpb65r940c.pdf

TPD65R700MFD
TPD65R700MFD

TPP65R940C, TPA65R940C, TPU65R940C, TPD65R940C, TPC65R940C, TPB65R940C Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package

 8.7. Size:698K  cn wuxi unigroup
tpa65r1k5m tpd65r1k5m tpu65r1k5m tpy65r1k5mb.pdf

TPD65R700MFD
TPD65R700MFD

TPA65R1K5M,TPD65R1K5M,TPU65R1K5M,TPY65R1K5MB Wuxi Unigroup Microelectronics Co.,Ltd 650V Super-junction Power MOSFET Description 650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction los

 8.8. Size:919K  cn wuxi unigroup
tpa65r950m tpb65r950m tpd65r950m.pdf

TPD65R700MFD
TPD65R700MFD

TPA65R950M,TPB65R950M,TPD65R950MWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses device with

 8.9. Size:876K  cn wuxi unigroup
tpa65r360m tpb65r360m tpd65r360m tpp65r360m tpr65r360m tpu65r360m.pdf

TPD65R700MFD
TPD65R700MFD

TPA65R360M,TPB65R360M,TPD65R360M,TPP65R360M,TPR65R360M,TPU65R360MWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDESCRIPTION650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication

 8.10. Size:673K  cn wuxi unigroup
tpa65r360m tpd65r360m tpp65r360m tpu65r360m.pdf

TPD65R700MFD
TPD65R700MFD

TPA65R360M, TPD65R360M, TPP65R360M, TPU65R360MWuxiUnigroupMicroelectronicsCompany650V Super-Junction Power MOSFETFEATURESlVerylowFOMRDS(on)Qgl100%avalanchetestedlRoHScompliantAPPLICATIONSlSwitchModePowerSupply(SMPS)lUninterruptiblePowerSupply(UPS)lPowerFactorCorrection(PFC)Device Marking and Package InformationDevice

 8.11. Size:659K  cn wuxi unigroup
tpa65r520d tpd65r520d.pdf

TPD65R700MFD
TPD65R700MFD

TPA65R520D,TPD65R520DWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losses device with highest

 8.12. Size:750K  cn wuxi unigroup
tpp65r380c tpa65r380c tpu65r380c tpd65r380c tpc65r380c tpb65r380c.pdf

TPD65R700MFD
TPD65R700MFD

TPP65R380C, TPA65R380C, TPU65R380C, TPD65R380C, TPC65R380C, TPB65R380C Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package

 8.13. Size:755K  cn wuxi unigroup
tpa65r280d tpb65r280d tpc65r280d tpd65r280d tpp65r280d tpu65r280d.pdf

TPD65R700MFD
TPD65R700MFD

TPA65R280D, TPB65R280D, TPC65R280D, TPD65R280D, TPP65R280D, TPU65R280D Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package

 8.14. Size:421K  cn wuxi unigroup
tpd65r600m.pdf

TPD65R700MFD
TPD65R700MFD

TPD65R600M Wuxi Unigroup Microelectronics Co.,Ltd 650V Super-Junction Power MOSFET DESCRIPTION 650V super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The SJ MOSFET is a price-performance optimized product enabling to target cost sensitive applications in Consumer and Lighti

 8.15. Size:902K  cn wuxi unigroup
tpa65r600m tpb65r600m tpd65r600m tpu65r600m.pdf

TPD65R700MFD
TPD65R700MFD

TPA65R600M,TPB65R600M,TPD65R600M,TPU65R600MWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses de

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TPD65R700MFD
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