TPV60R150C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPV60R150C
Código: 60R150C
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 151 W
Voltaje máximo drenador - fuente |Vds|: 600 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 20 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 46 nC
Tiempo de subida (tr): 14 nS
Conductancia de drenaje-sustrato (Cd): 116 pF
Resistencia entre drenaje y fuente RDS(on): 0.15 Ohm
Paquete / Cubierta: TO3PN
Búsqueda de reemplazo de MOSFET TPV60R150C
TPV60R150C Datasheet (PDF)
tpp60r150c tpa60r150c tpv60r150c tpc60r150c.pdf
TPP60R150C, TPA60R150C, TPV60R150C, TPC60R150C Wuxi Unigroup Microelectronics Company 600V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device P
tpa60r160m tpp60r160m tpv60r160m tpw60r160m.pdf
TPA60R160M, TPP60R160M, TPV60R160M, TPW60R160M WuxiUnigroupMicroelectronicsCompany600V Super-Junction Power MOSFETFEATURESlVerylowFOMRDS(on)Qgl100%avalanchetestedlRoHScompliantAPPLICATIONSlSwitchModePowerSupply(SMPS)lUninterruptiblePowerSupply(UPS)lPowerFactorCorrection(PFC)Device Marking and Package InformationDevic
tpv60r080cfd tpw60r080cfd.pdf
TPV60R080CFD, TPW60R080CFD Wuxi Unigroup Microelectronics Company 600V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant Fast Body Diode APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device
tpv6030r.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby TPV6030/DThe RF LineNPN SiliconTPV6030RF Power TransistorThe TPV6030 is designed for driver stages in band IV and V TV transmitteramplifiers. It incorporates high value emitter ballast resistors, gold metalliza-tions and offers a high degree of reliability and ruggedness.Including double input and output matching ne
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
