TPA65R940C Todos los transistores

 

TPA65R940C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TPA65R940C
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 23 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 27 nS
   Cossⓘ - Capacitancia de salida: 20 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm
   Paquete / Cubierta: TO220F
 

 Búsqueda de reemplazo de TPA65R940C MOSFET

   - Selección ⓘ de transistores por parámetros

 

TPA65R940C Datasheet (PDF)

 ..1. Size:515K  cn wuxi unigroup
tpp65r940c tpa65r940c tpu65r940c tpd65r940c tpc65r940c tpb65r940c.pdf pdf_icon

TPA65R940C

TPP65R940C, TPA65R940C, TPU65R940C, TPD65R940C, TPC65R940C, TPB65R940C Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package

 7.1. Size:748K  cn wuxi unigroup
tpa65r950m tpd65r950m.pdf pdf_icon

TPA65R940C

TPA65R950M,TPD65R950MWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses device with highest ro

 7.2. Size:919K  cn wuxi unigroup
tpa65r950m tpb65r950m tpd65r950m.pdf pdf_icon

TPA65R940C

TPA65R950M,TPB65R950M,TPD65R950MWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses device with

 8.1. Size:554K  cn wuxi unigroup
tpp65r160c tpa65r160c tpv65r160c.pdf pdf_icon

TPA65R940C

TPP65R160C, TPA65R160C, TPV65R160C Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marki

Otros transistores... TPB65R380C , TPP65R600C , TPA65R600C , TPU65R600C , TPD65R600C , TPC65R600C , TPB65R600C , TPP65R940C , CS150N03A8 , TPU65R940C , TPD65R940C , TPC65R940C , TPB65R940C , TPP70R950C , TPA70R950C , TPU70R950C , TPD70R950C .

History: MPSU70M1K5 | 2SJ49 | APT6011B2VR | NCE70N1K4K | 2SK1589-T1B | BLF147 | YJQ40G10A

 

 
Back to Top

 


 
.