FDB8443 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDB8443
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 188 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 182 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.003 Ohm
Paquete / Cubierta: TO263 D2PAK

Búsqueda de reemplazo de MOSFET FDB8443

FDB8443 Datasheet (PDF)

..1. Size:300K fairchild semi
fdb8443.pdf

June 2011FDB8443tmN-Channel PowerTrench MOSFET 40V, 182A, 3.0m ApplicationsFeatures Typ rDS(on) = 2.3m at VGS = 10V, ID = 80A Power Tools Typ Qg(10) = 142nC at VGS = 10V Automotive Engine Control Low Miller Charge Powertrain Management Low Qrr Body Diode Solenoid and Motor Drivers UIS Capability (Single Pulse and Repetitive Pulse) Electronic Steering RoHS Comp

..2. Size:430K fairchild semi
fdb8443 f085.pdf

March 2009FDB8443_F085N-Channel PowerTrench MOSFET 40V, 80A, 3.0m ApplicationsFeatures Typ rDS(on) = 2.3m at VGS = 10V, ID = 80A Automotive Engine Control Typ Qg(10) = 142nC at VGS = 10V Powertrain Management Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Steering UIS Capability (Single Pulse and Repetitive Pulse) Integrated Starter / A

..3. Size:367K onsemi
fdb8443.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

8.1. Size:452K fairchild semi
fdb8442 f085.pdf

May 2010FDB8442_F085N-Channel PowerTrench MOSFET40V, 80A, 2.9m Features Applications Automotive Engine Control Typ rDS(on) = 2.1m at VGS = 10V, ID = 80A Powertrain Management Typ Qg(10) = 181nC at VGS = 10V Solenoid and Motor Drivers Low Miller Charge Electronic Steering Low Qrr Body Diode Integrated Starter / Alternator UIS Capability (Single Pulse and Repet

8.2. Size:364K fairchild semi
fdb8445.pdf

January 2006FDB8445N-Channel PowerTrench MOSFET40V, 70A, 9m Features Applications Automotive Engine Control Typ rDS(on) = 6.8m at VGS = 10V, ID = 70A Powertrain Management Typ Qg(10) = 44nC at VGS = 10V Solenoid and Motor Drivers Low Miller Charge Electronic Transmission Low Qrr Body Diode Distributed Power Architecture and VRMs UIS Capability (Single Pulse/

8.3. Size:312K fairchild semi
fdb8442.pdf

November 2006FDB8442N-Channel PowerTrench MOSFET40V, 80A, 2.9m Features Applications Automotive Engine Control Typ rDS(on) = 2.1m at VGS = 10V, ID = 80A Powertrain Management Typ Qg(10) = 181nC at VGS = 10V Solenoid and Motor Drivers Low Miller Charge Electronic Steering Low Qrr Body Diode Integrated Starter / Alternator UIS Capability (Single Pulse and Repet

8.4. Size:384K fairchild semi
fdb8445 f085.pdf

October 2010FDB8445_F085N-Channel PowerTrench MOSFET40V, 70A, 9m Features Applications Automotive Engine Control Typ rDS(on) = 6.8m at VGS = 10V, ID = 70A Powertrain Management Typ Qg(10) = 44nC at VGS = 10V Solenoid and Motor Drivers Low Miller Charge Electronic Transmission Low Qrr Body Diode Distributed Power Architecture and VRMs UIS Capability (Single Puls

8.5. Size:302K fairchild semi
fdb8441.pdf

August 2006FDB8441N-Channel PowerTrench MOSFET40V, 80A, 2.5m Features Applications Automotive Engine Control Typ rDS(on) = 1.9m at VGS = 10V, ID = 80A Powertrain Management Typ Qg(10) = 215nC at VGS = 10V Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Steering UIS Capability (Single Pulse and Repetitive Pulse) Integrated Starter /

8.6. Size:292K fairchild semi
fdb8444ts.pdf

August 2007FDB8444TStmN-Channel PowerTrench MOSFET with Temperature Sensor40V, 70A, 5m Features Applications Typ rDS(on) = 3.8m at VGS = 10V, ID = 70A Automotive Engine Control Typ Qg(TOT) = 130nC at VGS = 10V Powertrain Management Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Transmission UIS Capability (Single Pulse and Repetitive Pul

8.7. Size:310K fairchild semi
fdb8444.pdf

February 2006FDB8444N-Channel PowerTrench MOSFET40V, 70A, 5.5m Features Applications Automotive Engine Control Typ rDS(on) = 3.9m at VGS = 10V, ID = 70A Powertrain Management Typ Qg(TOT) = 91nC at VGS = 10V Solenoid and Motor Drivers Low Miller Charge Electronic Transmission Low Qrr Body Diode Distributed Power Architecture and VRMs UIS Capability (Single Pul

8.8. Size:457K fairchild semi
fdb8441 f085.pdf

May 2010FDB8441_F085N-Channel PowerTrench MOSFET40V, 80A, 2.5m Features Applications Automotive Engine Control Typ rDS(on) = 1.9m at VGS = 10V, ID = 80A Powertrain Management Typ Qg(10) = 215nC at VGS = 10V Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Steering UIS Capability (Single Pulse and Repetitive Pulse) Integrated Starter

8.9. Size:387K fairchild semi
fdb8444 f085.pdf

October 2010FDB8444_F085N-Channel PowerTrench MOSFET40V, 70A, 5.5m Features Applications Automotive Engine Control Typ rDS(on) = 3.9m at VGS = 10V, ID = 70A Powertrain Management Typ Qg(TOT) = 91nC at VGS = 10V Solenoid and Motor Drivers Low Miller Charge Electronic Transmission Low Qrr Body Diode Distributed Power Architecture and VRMs UIS Capability (Single P

8.10. Size:431K fairchild semi
fdb8447l.pdf

February 2007FDB8447L40V N-Channel PowerTrench MOSFET 40V, 50A, 8.5mFeatures General Description Max rDS(on) = 8.5m at VGS = 10V, ID = 14AThis N-Channel MOSFET has been produced using Fairchild Semiconductors proprietary PowerTrench technology to Max rDS(on) = 11m at VGS = 4.5V, ID = 11Adeliver low rDS(on) and optimized BVDSS capability to offer Fast Switch

8.11. Size:441K onsemi
fdb8445.pdf