TPB70R950C Todos los transistores

 

TPB70R950C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TPB70R950C
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 37 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 26 nS
   Cossⓘ - Capacitancia de salida: 24 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm
   Paquete / Cubierta: TO263
 

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TPB70R950C Datasheet (PDF)

 ..1. Size:735K  cn wuxi unigroup
tpp70r950c tpa70r950c tpu70r950c tpd70r950c tpc70r950c tpb70r950c.pdf pdf_icon

TPB70R950C

TPP70R950C, TPA70R950C, TPU70R950C, TPD70R950C, TPC70R950C, TPB70R950C Wuxi Unigroup Microelectronics Company 700V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package

 5.1. Size:734K  cn wuxi unigroup
tpb70r950m tpd70r950m.pdf pdf_icon

TPB70R950C

TPB70R950M,TPD70R950MWuxi Unigroup Microelectronics Co.,Ltd700V Super-junction Power MOSFETDescription700V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses device with highest ro

 8.1. Size:768K  cn wuxi unigroup
tpa70r450c tpb70r450c tpc70r450c tpd70r450c tpp70r450c tpu70r450c.pdf pdf_icon

TPB70R950C

TPA70R450C, TPB70R450C, TPC70R450C, TPD70R450C, TPP70R450C, TPU70R450C Wuxi Unigroup Microelectronics Company 700V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package

 8.2. Size:1095K  cn wuxi unigroup
tpa70r600m tpb70r600m tpd70r600m tpr70r600m tpu70r600m.pdf pdf_icon

TPB70R950C

TPA70R600M,TPB70R600M,TPD70R600M,TPR70R600M,TPU70R600MWuxi Unigroup Microelectronics Co.,Ltd700V Super-junction Power MOSFETDescription700V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conductio

Otros transistores... TPD65R940C , TPC65R940C , TPB65R940C , TPP70R950C , TPA70R950C , TPU70R950C , TPD70R950C , TPC70R950C , IRFZ48N , TPP80R270M , TPV80R300C , TPC80R300C , TPP90R350A , TPA90R350A , TPR60R120MFD , TPW60R120MFD , TPV60R080CFD .

 

 
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