TPW65R080C Todos los transistores

 

TPW65R080C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TPW65R080C
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 390 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 47 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 225 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm
   Paquete / Cubierta: TO247
 

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TPW65R080C Datasheet (PDF)

 ..1. Size:442K  cn wuxi unigroup
tpv65r080c tpw65r080c.pdf pdf_icon

TPW65R080C

TPV65R080C, TPW65R080C Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TPV65R08

 7.1. Size:452K  cn wuxi unigroup
tpw65r040m.pdf pdf_icon

TPW65R080C

TPW65R040M Wuxi Unigroup Microelectronics Co.,Ltd 650V Super-Junction Power MOSFET DESCRIPTION 650V super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The SJ MOSFET is a price-performance optimized product enabling to target cost sensitive applications in Consumer and Lighti

 7.2. Size:773K  cn wuxi unigroup
tpa65r070d tpb65r070d tpp65r070d tpw65r070d.pdf pdf_icon

TPW65R080C

TPA65R070D,TPB65R070D,TPP65R070D,TPW65R070D Wuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losse

 7.3. Size:452K  cn wuxi unigroup
tpw65r044mfd.pdf pdf_icon

TPW65R080C

TPW65R044MFD Wuxi Unigroup Microelectronics Co.,Ltd 650V Super-Junction Power MOSFET DESCRIPTION 650V super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The SJ MOSFET is a price-performance optimized product enabling to target cost sensitive applications in Consumer and Ligh

Otros transistores... TPC80R300C , TPP90R350A , TPA90R350A , TPR60R120MFD , TPW60R120MFD , TPV60R080CFD , TPW60R080CFD , TPV65R080C , 2SK3918 , TPW60R040MFD , TPW60R080M , TPW60R090MFD , TPW65R040M , TPW65R044MFD , TPW65R090M , TPW65R190MFD , TPW70R100MFD .

History: TPR65R360M | HGP100N12SL | DHD16N06 | SPP07N60C3 | SSM6J53FE | BLS65R380-A | NTMD6P02R2

 

 
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