TPW65R190MFD Todos los transistores

 

TPW65R190MFD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TPW65R190MFD
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 151 W
   Voltaje máximo drenador - fuente |Vds|: 650 V
   Voltaje máximo fuente - puerta |Vgs|: 30 V
   Corriente continua de drenaje |Id|: 20 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tiempo de subida (tr): 72 nS
   Conductancia de drenaje-sustrato (Cd): 57 pF
   Resistencia entre drenaje y fuente RDS(on): 0.19 Ohm
   Paquete / Cubierta: TO247

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TPW65R190MFD Datasheet (PDF)

 ..1. Size:454K  cn wuxi unigroup
tpw65r190mfd.pdf

TPW65R190MFD TPW65R190MFD

TPW65R190MFD Wuxi Unigroup Microelectronics Co.,Ltd 650V Super-Junction Power MOSFET DESCRIPTION 650V super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The SJ MOSFET is a price-performance optimized product enabling to target cost sensitive applications in Consumer and Ligh

 7.1. Size:832K  cn wuxi unigroup
tpb65r135mfd tpp65r135mfd tpw65r135mfd.pdf

TPW65R190MFD TPW65R190MFD

TPB65R135MFD,TPP65R135MFD,TPW65R135MFDWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide an

 7.2. Size:947K  cn wuxi unigroup
tpa65r170m tpb65r170m tpc65r170m tpp65r170m tpv65r170m tpw65r170m.pdf

TPW65R190MFD TPW65R190MFD

TPA65R170M,TPB65R170M,TPC65R170M,TPP65R170M,TPV65R170M,TPW65R170MWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDESCRIPTION650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication

 7.3. Size:626K  cn wuxi unigroup
tpa65r170m tpp65r170m tpv65r170m tpw65r170m.pdf

TPW65R190MFD TPW65R190MFD

TPA65R170M, TPP65R170M, TPV65R170M, TPW65R170M Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device T

 7.4. Size:649K  cn wuxi unigroup
tpa65r100mfd tpv65r100mfd tpw65r100mfd.pdf

TPW65R190MFD TPW65R190MFD

TPA65R100MFD,TPV65R100MFD,TPW65R100MFDWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDESCRIPTION650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide a

 7.5. Size:801K  cn wuxi unigroup
tpb65r120m tpp65r120m tpr65r120m tpw65r120m.pdf

TPW65R190MFD TPW65R190MFD

TPB65R120M,TPP65R120M,TPR65R120M,TPW65R120MWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses de

 7.6. Size:499K  cn wuxi unigroup
tpw65r120m.pdf

TPW65R190MFD TPW65R190MFD

TPW65R120MWuxi Unigroup Microelectronics Co.,Ltd650V Super-Junction Power MOSFETDESCRIPTION650V super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The SJ MOSFET is a price-performance optimized product enabling to target cost sensitive applications in Consumer and Lighting ma

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