TPW65R190MFD MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPW65R190MFD
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 151 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 72 nS
Cossⓘ - Capacitancia de salida: 57 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm
Encapsulados: TO247
Búsqueda de reemplazo de TPW65R190MFD MOSFET
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TPW65R190MFD datasheet
tpw65r190mfd.pdf
TPW65R190MFD Wuxi Unigroup Microelectronics Co.,Ltd 650V Super-Junction Power MOSFET DESCRIPTION 650V super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs designed according to the SJ principle. The SJ MOSFET is a price-performance optimized product enabling to target cost sensitive applications in Consumer and Ligh
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TPA65R170M,TPB65R170M,TPC65R170M,TPP65R170M,TPV65R170M,TPW65R170M Wuxi Unigroup Microelectronics Co.,Ltd 650V Super-junction Power MOSFET DESCRIPTION 650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs designed according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication
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TPA65R170M, TPP65R170M, TPV65R170M, TPW65R170M Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on) Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device T
Otros transistores... TPV65R080C, TPW65R080C, TPW60R040MFD, TPW60R080M, TPW60R090MFD, TPW65R040M, TPW65R044MFD, TPW65R090M, AO4468, TPW70R100MFD, TPW80R200MFD, TPW80R300MFD, TPY70R1K5MB, TSB15N06A, TSB15N10A, TSD10N06AT, TSD120N10AT
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