TSB15N10A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TSB15N10A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 208 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 150 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 22 nS
Cossⓘ - Capacitancia de salida: 470 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0042 Ohm
Paquete / Cubierta: TO263
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TSB15N10A Datasheet (PDF)
tsb15n10a.pdf

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tsb15n06a.pdf

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Otros transistores... TPW65R044MFD , TPW65R090M , TPW65R190MFD , TPW70R100MFD , TPW80R200MFD , TPW80R300MFD , TPY70R1K5MB , TSB15N06A , 20N60 , TSD10N06AT , TSD120N10AT , TSP120N10AT , TSG120N10AT , TSD12N06AT , TSG017N045AT , TSG10N06AT , TSG12N06AT .



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