FDB8860F085 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDB8860F085
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 254 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   Qgⓘ - Carga de la puerta: 165 nC
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0023 Ohm
   Paquete / Cubierta: TO263 D2PAK

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FDB8860F085 Datasheet (PDF)

7.1. Size:497K fairchild semi
fdb8860.pdf

December 2010FDB8860N-Channel Logic Level PowerTrench MOSFET30V, 80A, 2.6m Features Applications RDS(ON) = 1.9m (Typ), VGS = 5V, ID = 80A DC-DC Converters Qg(5) = 89nC (Typ), VGS = 5V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) RoHS CompliantFDB8860 Rev A22010 Fairchild Semiconductor Corporation1 www.fairchildsemi.

7.2. Size:152K fairchild semi
fdb8860 f085.pdf

June 2010_FDB8860 F085N-Channel Logic Level PowerTrench MOSFET30V, 80A, 2.6m Features Applications RDS(ON) = 1.9m (Typ), VGS = 5V, ID = 80A 12V Automotive Load Control Qg(5) = 89nC (Typ), VGS = 5V Start / Alternator Systems Low Miller Charge Electronic Power Steering Systems Low QRR Body Diode ABS UIS Capability (Single Pulse and Repetitive Pulse) DC-DC Converters

7.3. Size:519K onsemi
fdb8860.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

7.4. Size:288K inchange semiconductor
fdb8860.pdf

isc N-Channel MOSFET Transistor FDB8860FEATURESDrain Current : I =31A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =2.3m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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