FDB8870 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDB8870
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 160 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 160 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0039 Ohm
Paquete / Cubierta: TO263 D2PAK

Búsqueda de reemplazo de MOSFET FDB8870

FDB8870 Datasheet (PDF)

..1. Size:211K fairchild semi
fdb8870 f085.pdf

July 2010FDB8870_F085N-Channel PowerTrench MOSFET30V, 160A, 3.9mGeneral DescriptionFeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 3.9m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters usingeither synchronous or conventional switching PWM rDS(ON) = 4.4m, VGS = 4.5V, ID = 35Acontrollers. It has been optimized for

..2. Size:765K fairchild semi
fdb8870.pdf

May 2008tmFDB8870N-Channel PowerTrench MOSFET30V, 160A, 3.9mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 3.9m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 4.4m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been optimized for

..3. Size:285K inchange semiconductor
fdb8870.pdf

isc N-Channel MOSFET Transistor FDB8870FEATURESDrain Current : I =160A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =3.9m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

8.1. Size:304K fairchild semi
fdb8876.pdf

November 2005FDB8876N-Channel PowerTrench MOSFET 30V, 71A, 8.5mGeneral Descriptions Features rDS(ON) = 8.5m, VGS = 10V, ID = 40AThis N-Channel MOSFET has been designed specifically to rDS(ON) = 10.3m, VGS = 4.5V, ID = 40Aimprove the overall efficiency of DC/DC converters using High performance trench technology for extremely low either synchronous or conventiona

8.2. Size:277K fairchild semi
fdb8878.pdf

November 2005FDB8878N-Channel Logic Level PowerTrench MOSFET 30V, 48A, 14mGeneral Descriptions Features rDS(ON) = 14m, VGS = 10V, ID = 40AThis N-Channel MOSFET has been designed specifically to rDS(ON) = 18m, VGS = 4.5V, ID = 36Aimprove the overall efficiency of DC/DC converters using High performance trench technology for extremely low either synchronous or con

8.3. Size:473K fairchild semi
fdb8874.pdf

2May 2008tmMFDB8874N-Channel PowerTrench MOSFET30V, 121A, 4.7mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 4.7m, VGS = 10V, ID = 40Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 6.0m, VGS = 4.5V, ID = 40Aeither synchronous or conventional switching PWMcontrollers. It has been optimized

8.4. Size:287K inchange semiconductor
fdb8876.pdf

isc N-Channel MOSFET Transistor FDB8876FEATURESDrain Current : I =121A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =4.7m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

8.5. Size:287K inchange semiconductor
fdb8878.pdf

isc N-Channel MOSFET Transistor FDB8878FEATURESDrain Current : I =48A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =14m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dr

8.6. Size:287K inchange semiconductor
fdb8874.pdf

isc N-Channel MOSFET Transistor FDB8874FEATURESDrain Current : I =121A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =4.7m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

Otros transistores... FDB8832 , STU313D , FDB8832F085 , STU314D , FDB8860 , STU320S , FDB8860F085 , STU310DH , SPW47N60C3 , STU30N15 , FDB8870F085 , STU30N01 , FDB8880 , STU30L01A , FDB8896 , STU30L01 , FDB8896F085 .

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