FDB8896F085 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDB8896F085
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 80 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 93 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0057 Ohm
Paquete / Cubierta: TO263 D2PAK
Búsqueda de reemplazo de FDB8896F085 MOSFET
FDB8896F085 datasheet
fdb8896 f085.pdf
July 2010 FDB8896_F085 N-Channel PowerTrench MOSFET 30V, 93A, 5.7m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 5.7m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using rDS(ON) = 6.8m , VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been optimized for lo
fdb8896.pdf
May 2008 tm FDB8896 N-Channel PowerTrench MOSFET 30V, 93A, 5.7m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 5.7m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using rDS(ON) = 6.8m , VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been optimized for l
fdb8896.pdf
isc N-Channel MOSFET Transistor FDB8896 FEATURES Drain Current I =93A@ T =25 D C Drain Source Voltage V =30V(Min) DSS Static Drain-Source On-Resistance R =5.7m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d
Otros transistores... FDB8870 , STU30N15 , FDB8870F085 , STU30N01 , FDB8880 , STU30L01A , FDB8896 , STU30L01 , RU7088R , STU309DH , FDC2512 , FDC2612 , STU309D , FDC3512 , FDC3535 , FDC3601N , STU307S .
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