FDB8896F085 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDB8896F085
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 80 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 93 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0057 Ohm
Paquete / Cubierta: TO263 D2PAK
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FDB8896F085 Datasheet (PDF)
fdb8896 f085.pdf

July 2010FDB8896_F085N-Channel PowerTrench MOSFET30V, 93A, 5.7mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 5.7m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 6.8m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been optimized for lo
fdb8896.pdf

May 2008tmFDB8896N-Channel PowerTrench MOSFET30V, 93A, 5.7mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 5.7m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 6.8m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been optimized for l
fdb8896.pdf

isc N-Channel MOSFET Transistor FDB8896FEATURESDrain Current : I =93A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =5.7m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
Otros transistores... FDB8870 , STU30N15 , FDB8870F085 , STU30N01 , FDB8880 , STU30L01A , FDB8896 , STU30L01 , MMD60R360PRH , STU309DH , FDC2512 , FDC2612 , STU309D , FDC3512 , FDC3535 , FDC3601N , STU307S .
History: STP21N05LFI | ECH8673 | STU307S
History: STP21N05LFI | ECH8673 | STU307S



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