VBE165R10 Todos los transistores

 

VBE165R10 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: VBE165R10
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 156 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 55 nS
   Cossⓘ - Capacitancia de salida: 400 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.9 Ohm
   Paquete / Cubierta: TO252
 

 Búsqueda de reemplazo de VBE165R10 MOSFET

   - Selección ⓘ de transistores por parámetros

 

VBE165R10 Datasheet (PDF)

 ..1. Size:1284K  cn vbsemi
 vbm165r10 vbmb165r10 vbe165r10 vbfb165r10.pdf pdf_icon

VBE165R10

VBM165R10 / VBMB165R10VBE165R10 / VBFB165R10www.VBsemi.comN hannel 650 D S Power MOSFETFEATURESPRODUCT SUMMARYVDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.9 Reduced switching and conduction lossesQg max. (nC)57 Ultra low gate charge (Qg)Qgs (nC)4.0 Avalanche energy

 7.1. Size:932K  cn vbsemi
 vbm165r07 vbmb165r07 vbe165r07 vbfb165r07.pdf pdf_icon

VBE165R10

VBM165R07 / VBMB165R07VBE165R07 / VBFB165R07www.VBsemi.comN hannel 650 D S Power MOSFETFEATURESPRODUCT SUMMARYVDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 1.1 Reduced switching and conduction lossesQg max. (nC) 25 Ultra low gate charge (Qg)Qgs (nC) 2.0 Avalanche energy r

 7.2. Size:984K  cn vbsemi
 vbe165r04.pdf pdf_icon

VBE165R10

VBE165R04 www.VBsemi.comPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 650AvailableRequirementRDS(on) ()VGS = 10 V 1.8RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 48RuggednessQgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 19 Compliant to RoH

 7.3. Size:1082K  cn vbsemi
 vbe165r02.pdf pdf_icon

VBE165R10

VBE165R02www.VBsemi.comN-Channel 650 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 650AvailableRequirementRDS(on) ()VGS = 10 V 3.8RoHS Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 15RuggednessQgs (nC) 3 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 6 Compliant to Ro

MOSTRAR MÁS

Otros transistores... VBE165R07 , VBFB165R07 , VBM165R07S , VBMB165R07S , VBE165R07S , VBFB165R07S , VBM165R10 , VBMB165R10 , K3569 , VBFB165R10 , VBL165R10 , VBM165R12 , VBMB165R12 , VBL165R12 , VBM165R18 , VBM165R20S , VBMB165R20S .

History: APQ0DSN60AJ | TT8K11 | 2SK2596 | BSO200P03S | NP82N055NHE

 

 
Back to Top

 


 
.