VBFB16R02 Todos los transistores

 ..1. Size:1462K  cn vbsemi
 vbm16r02 vbmb16r02 vbe16r02 vbfb16r02.pdf

VBM16R02 / VBMB16R02 VBE16R02 / VBFB16R02 www.VBsemi.com Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 600 Definition Dynamic dV/dt Rating RDS(on) ( )VGS = 10 V 4.4 Repetitive Avalanche Rated Qg (Max.) (nC) 18 Surface Mount (IRFRC20, SiHFRC20) Qgs (nC) 3.0 Straight Lead (IRFUC20, SiHFUC20) Qgd (nC) 8.9 Available

 6.1. Size:765K  cn vbsemi
 vbm16r04 vbmb16r04 vbe16r04 vbfb16r04.pdf

VBM16R04 / VBMB16R04 VBE16R04 / VBFB16R04 www.VBsemi.com N hannel 600 D S Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 600 Reduced Gate Drive Requirement Available RDS(on) ( )VGS = 10 V 2.2 Enhanced 30 V, VGS Rating RoHS* Qg (Max.) (nC) 39 COMPLIANT Reduced Ciss, Coss, Crss Qgs (nC) 10 Extremely High Frequency Operation Qgd (nC)

 8.1. Size:932K  cn vbsemi
 vbm165r07 vbmb165r07 vbe165r07 vbfb165r07.pdf

VBM165R07 / VBMB165R07 VBE165R07 / VBFB165R07 www.VBsemi.com N hannel 650 D S Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 1.1 Reduced switching and conduction losses Qg max. (nC) 25 Ultra low gate charge (Qg) Qgs (nC) 2.0 Avalanche energy r

 8.2. Size:586K  cn vbsemi
 vbfb1630.pdf

VBFB1630 www.VBsemi.com N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Definition 0.032 at VGS = 10 V 35d TrenchFET Power MOSFET 60 21.7 0.037 at VGS = 4.5 V 30d 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Power Supply D TO-251 - Seconda

 8.3. Size:1284K  cn vbsemi
 vbm165r10 vbmb165r10 vbe165r10 vbfb165r10.pdf

VBM165R10 / VBMB165R10 VBE165R10 / VBFB165R10 www.VBsemi.com N hannel 650 D S Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.9 Reduced switching and conduction losses Qg max. (nC) 57 Ultra low gate charge (Qg) Qgs (nC) 4.0 Avalanche energy

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 vbm165r07s vbmb165r07s vbe165r07s vbfb165r07s.pdf

 8.5. Size:1223K  cn vbsemi
 vbfb165r04.pdf

VBFB165R04 www.VBsemi.com N hannel 650 D S Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 650 Requirement RoHS RDS(on) ( )VGS = 10 V 2.0 COMPLIANT Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 48 Ruggedness Qgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 19 Comp

 8.6. Size:881K  cn vbsemi
 vbfb1615.pdf

VBFB1615 www.VBsemi.com N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.011 at VGS = 10 V 55 Material categorization 60 0.012 at VGS = 4.5 V 47 TO-251 D G S N-Channel MOSFET G D S Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbo

 8.7. Size:1415K  cn vbsemi
 vbfb165r02.pdf

VBFB165R02 www.VBsemi.com N hannel 650 D S Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 650 Available Requirement RDS(on) ( )VGS = 10 V 5 RoHS Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qg (Max.) (nC) 11 Ruggedness Qgs (nC) 2.3 Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 5.