VBZA4435 Todos los transistores

 

VBZA4435 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: VBZA4435
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 13 nS
   Cossⓘ - Capacitancia de salida: 180 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.018(typ) Ohm
   Paquete / Cubierta: SO8
 

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VBZA4435 Datasheet (PDF)

 ..1. Size:492K  cn vbsemi
vbza4435.pdf pdf_icon

VBZA4435

VBZA4435www.VBsemi.comP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.024 at VGS = - 4.5 V - 7.8APPLICATIONS Load Switch Battery SwitchS SO-8S1 8 DG S D2 7S3 6 D

 7.1. Size:890K  cn vbsemi
vbza4430.pdf pdf_icon

VBZA4435

VBZA4430www.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.005at VGS = 10 V 1830 6.8 nC Optimized for High-Side Synchronous0.006 at VGS = 4.5 V 16Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchS

 8.1. Size:1128K  cn vbsemi
vbza4425.pdf pdf_icon

VBZA4435

VBZA4425www.VBsemi.comP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.023at VGS = - 10 V - 7 100 % Rg TestedRoHS- 30 28 nCCOMPLIANT 100 % UIS Tested0.030 at VGS = - 4.5 V -5APPLICATIONS Load Switch Notebook Adaptor SwitchSO-8 S S1 8 DS D2 7G S3 6 D

 8.2. Size:1229K  cn vbsemi
vbza4410.pdf pdf_icon

VBZA4435

VBZA4410www.VBsemi.comN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.011 at VGS = 10 V 1120 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 9Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchSO

Otros transistores... VBZA4042 , VBZA4407 , VBZA4409 , VBZA4410 , VBZA4412 , VBZA4420 , VBZA4425 , VBZA4430 , STP75NF75 , VBZA4606 , VBZA4611 , VBZA4618 , VBZA4800 , VBZA4805 , VBZA4850 , VBZA4936 , VBZA4946 .

History: JCS7N95ABA | SM4370NSKP | OSG70R2K6FF | QM3010B | IPAN70R900P7S | FIR30N03D3G | NTMFS4935NBT1G

 

 
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