VBZE12N06 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: VBZE12N06

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 41 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 16 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 85 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.095 Ohm

Encapsulados: TO252

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VBZE12N06 datasheet

 ..1. Size:1633K  cn vbsemi
 vbze12n06.pdf pdf_icon

VBZE12N06

VBZE12N06 www.VBsemi.com N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.095at VGS = 10 V 16 Material categorization 60 19.8 For definitions of compliance please see 0.110 at VGS = 4.5 V 13 TO-252 APPLICATIONS D DC/DC Converters DC/AC Inverters Motor Dr

 6.1. Size:2307K  cn vbsemi
 vbze12n03.pdf pdf_icon

VBZE12N06

VBZE12N03 www.VBsemi.com N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.014at VGS = 10 V 40 30 28nC 0.020at VGS = 4.5 V 35 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S S Top View N-Channel MOSFET ABSOLU

 7.1. Size:1444K  cn vbsemi
 vbze12n10.pdf pdf_icon

VBZE12N06

VBZE12N10 www.VBsemi.com N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 100 at VGS = 10 V 0.090 17 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS

 8.1. Size:834K  cn vbsemi
 vbze12p10.pdf pdf_icon

VBZE12N06

VBZE12P10 www.VBsemi.com P-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Definition 0.180 at VGS = - 10 V - 7.5 TrenchFET Power MOSFET - 100 11 0.200 at VGS = - 4.5 V - 6 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Power Switch DC/DC Con

MOSTRAR MÁS

Otros transistores... VBZE04N03, VBZE06N02, VBZE06N03, VBZE100N02, VBZE100N03, VBZE100P03, VBZE10N20, VBZE12N03, IRFP250, VBZE12N10, VBZE12P10, VBZE15N03, VBZE15N10, VBZE16N05, VBZE20N03, VBZE20N06, VBZE20N10