VBZE40N10 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: VBZE40N10

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 60 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 30 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 290 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm

Encapsulados: TO252

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VBZE40N10 datasheet

 ..1. Size:2331K  cn vbsemi
 vbze40n10.pdf pdf_icon

VBZE40N10

VBZE40N10 www.VBsemi.com N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 100 0.035at VGS = 10 V 30 RoHS* Low Thermal Resistance Package COMPLIANT D TO-252 G G D S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Paramet

 7.1. Size:1660K  cn vbsemi
 vbze40n03.pdf pdf_icon

VBZE40N10

VBZE40N03 www.VBsemi.com N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.008at VGS = 10 V 75 30 30 nC 0.011 at VGS = 4.5 V 50 APPLICATIONS D OR-ing TO-252 Server DC/DC G G D S Top View S N-Channel MOSFET ABSOL

 7.2. Size:1582K  cn vbsemi
 vbze40n06.pdf pdf_icon

VBZE40N10

VBZE40N06 www.VBsemi.com N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.035 at VGS = 10 V 30 RoHS* 60 0.051 at VGS = 4.5 V 23 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted

 8.1. Size:1080K  cn vbsemi
 vbze40p06.pdf pdf_icon

VBZE40N10

VBZE40P06 www.VBsemi.com P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ) Definition 0.048 at VGS = - 10 V - 40 TrenchFET Power MOSFET - 60 16 0.057at VGS = - 4.5 V - 25 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS High Side Switch for Full Bridge Co

MOSTRAR MÁS

Otros transistores... VBZE2810, VBZE2N60, VBZE30N02, VBZE30N03, VBZE30N06, VBZE30N10, VBZE40N03, VBZE40N06, STP65NF06, VBZE40P03, VBZE40P06, VBZE40P10, VBZE4204, VBZE4286, VBZE45N03, VBZE50N03, VBZE50N04