VBZE4286 Todos los transistores

 ..1. Size:2734K  cn vbsemi
 vbze4286.pdf

VBZE4286 www.VBsemi.com N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 100 0.054at VGS = 10 V 25 RoHS* Low Thermal Resistance Package COMPLIANT D TO-252 G G D S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Paramete

 8.1. Size:1224K  cn vbsemi
 vbze4204.pdf

VBZE4204 www.VBsemi.com N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, c Qg (Typ.) 100 % Rg and UIS Tested RoHS 130 0.004 at VGS = 10 V COMPLIANT 40 60 nC 100 0.006at VGS = 4.5 V APPLICATIONS D Synchronous Rectification Power Supplies TO-252 G G D S S Top View N-Channel MOSFET ABSOLUTE MAX

 9.1. Size:1660K  cn vbsemi
 vbze40n03.pdf

VBZE40N03 www.VBsemi.com N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.008at VGS = 10 V 75 30 30 nC 0.011 at VGS = 4.5 V 50 APPLICATIONS D OR-ing TO-252 Server DC/DC G G D S Top View S N-Channel MOSFET ABSOL

 9.2. Size:1080K  cn vbsemi
 vbze40p06.pdf

VBZE40P06 www.VBsemi.com P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ) Definition 0.048 at VGS = - 10 V - 40 TrenchFET Power MOSFET - 60 16 0.057at VGS = - 4.5 V - 25 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS High Side Switch for Full Bridge Co

 9.3. Size:2331K  cn vbsemi
 vbze40n10.pdf

VBZE40N10 www.VBsemi.com N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 100 0.035at VGS = 10 V 30 RoHS* Low Thermal Resistance Package COMPLIANT D TO-252 G G D S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Paramet

 9.4. Size:2494K  cn vbsemi
 vbze45n03.pdf

VBZE45N03 www.VBsemi.com N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.009 at VGS = 10 V 58 30 28nC 0.016 at VGS = 4.5 V 40 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S S Top View N-Channel MOSFET ABSO

 9.5. Size:972K  cn vbsemi
 vbze40p03.pdf

VBZE40P03 www.VBsemi.com P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.018 at VGS = - 10 V - 40 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.025 at VGS = - 4.5 V - 35 APPLICATIONS Load Switch Battery Switch S TO-252 G D G D S P-Channel MOSFET

 9.6. Size:1582K  cn vbsemi
 vbze40n06.pdf

VBZE40N06 www.VBsemi.com N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.035 at VGS = 10 V 30 RoHS* 60 0.051 at VGS = 4.5 V 23 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted

 9.7. Size:1013K  cn vbsemi
 vbze40p10.pdf

VBZE40P10 www.VBsemi.com P-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) - 100 Definition RDS(on) ( ) at VGS = - 10 V 0.033 TrenchFET Power MOSFET RDS(on) ( ) at VGS = - 4.5 V 0.036 Package with Low Thermal Resistance ID (A) - 40 100 % Rg and UIS Tested Configuration Single Compliant to RoHS Directiv