VBZE50N06 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: VBZE50N06

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 200 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 60 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15 nS

Cossⓘ - Capacitancia de salida: 470 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm

Encapsulados: TO252

 Búsqueda de reemplazo de VBZE50N06 MOSFET

- Selecciónⓘ de transistores por parámetros

 

VBZE50N06 datasheet

 ..1. Size:1066K  cn vbsemi
 vbze50n06.pdf pdf_icon

VBZE50N06

VBZE50N06 www.VBsemi.com N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.009 at VGS = 10 V 60 Material categorization 60 0.011at VGS = 4.5 V 50 D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limit

 6.1. Size:2414K  cn vbsemi
 vbze50n03.pdf pdf_icon

VBZE50N06

VBZE50N03 www.VBsemi.com N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.010 at VGS = 10 V 53 30 28nC 0.016 at VGS = 4.5 V 40 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S S Top View N-Channel MOSFET ABSO

 6.2. Size:1323K  cn vbsemi
 vbze50n04.pdf pdf_icon

VBZE50N06

VBZE50N04 www.VBsemi.com N-Channel 4 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.012 at VGS = 10 V 50 40 36 nC 0.014 at VGS = 4.5 V 40 APPLICATIONS D OR-ing TO-252 Server DC/DC G D G S S Top View N-Channel MOSFET A

 8.1. Size:486K  cn vbsemi
 vbze50p03.pdf pdf_icon

VBZE50N06

VBZE50P03 www.VBsemi.com P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Compliant to RoHS Directive 2002/95/EC VDS (V) RDS(on) ( )ID (A)a Available 0.011 at VGS = - 10 V 50 RoHS* - 30 COMPLIANT 0.013 at VGS = - 4.5 V 45 S TO-252 G D G S D Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limit Unit G

MOSTRAR MÁS

Otros transistores... VBZE40P03, VBZE40P06, VBZE40P10, VBZE4204, VBZE4286, VBZE45N03, VBZE50N03, VBZE50N04, AON7403, VBZE50P03, VBZE50P04, VBZE50P06, VBZE5N20, VBZE60N02, VBZE60N03, VBZE70N03, VBZE75N03