VBZE50P06 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: VBZE50P06

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 113 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 50 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 70 nS

Cossⓘ - Capacitancia de salida: 380 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm

Encapsulados: TO252

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VBZE50P06 datasheet

 ..1. Size:1245K  cn vbsemi
 vbze50p06.pdf pdf_icon

VBZE50P06

VBZE50P06 www.VBsemi.com P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) Material categorization 0.020 at VGS = - 10 V - 50 - 60 0.025 at VGS = - 4.5 V - 45 APPLICATIONS Load Switch TO-252 S G D G S D Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) Parameter

 6.1. Size:486K  cn vbsemi
 vbze50p03.pdf pdf_icon

VBZE50P06

VBZE50P03 www.VBsemi.com P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Compliant to RoHS Directive 2002/95/EC VDS (V) RDS(on) ( )ID (A)a Available 0.011 at VGS = - 10 V 50 RoHS* - 30 COMPLIANT 0.013 at VGS = - 4.5 V 45 S TO-252 G D G S D Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limit Unit G

 6.2. Size:1186K  cn vbsemi
 vbze50p04.pdf pdf_icon

VBZE50P06

VBZE50P04 www.VBsemi.com P-Channel 4 0 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) -40 Package with low thermal resistance RDS(on) ( ) at VGS = -10 V 0.010 100 % Rg and UIS tested RDS(on) ( ) at VGS = -4.5 V 0.013 ID (A) -65 Configuration Single TO-252 S G D D G S P-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 C

 8.1. Size:1066K  cn vbsemi
 vbze50n06.pdf pdf_icon

VBZE50P06

VBZE50N06 www.VBsemi.com N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.009 at VGS = 10 V 60 Material categorization 60 0.011at VGS = 4.5 V 50 D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limit

MOSTRAR MÁS

Otros transistores... VBZE4204, VBZE4286, VBZE45N03, VBZE50N03, VBZE50N04, VBZE50N06, VBZE50P03, VBZE50P04, RU7088R, VBZE5N20, VBZE60N02, VBZE60N03, VBZE70N03, VBZE75N03, VBZE7843, VBZE80N03, VBZE80N06