VBZE80N03 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

VBZE80N03 Datasheet (PDF)

..1. Size:2019K cn vbsemi
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VBZE80N03www.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.007at VGS = 10 V 8533 nC300.011 at VGS = 4.5 V 50APPLICATIONSD OR-ingTO-252 Server DC/DCGG D STop ViewSN-Channel MOSFETABSO

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VBZE80N06www.VBsemi.comN-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 60 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.006 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.008100ID (A)SingleConfigurationDTO-252GG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25

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VBZE80N10www.VBsemi.comN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ.) 100 % UIS tested0.055 at VGS = 10 V 250.057 at VGS = 4.5 V 100 25 21nC0.070 at VGS = 2.5 V 18APPLICATIONS Primary side switchDTO-252GG D SSN-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TA = 25 C, unl

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VBZE80P03www.VBsemi.comP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Compliant to RoHS Directive 2002/95/ECVDS (V) RDS(on) ()ID (A)aAvailable0.009 at VGS = - 10 V - 65RoHS*- 300.012at VGS = - 4.5 V - 50 COMPLIANTSTO-252GDG SDTop ViewP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit UnitGat

Otros transistores... VBZE50P04 , VBZE50P06 , VBZE5N20 , VBZE60N02 , VBZE60N03 , VBZE70N03 , VBZE75N03 , VBZE7843 , BS170 , VBZE80N06 , VBZE80N10 , VBZE80P03 , VBZE90N03 , VBZE9N03 , VBZFB06N02 , VBZFB10N20 , VBZFB12P10 .