VBZFB15N10 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: VBZFB15N10
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 61 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 15 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 35 nS
Cossⓘ - Capacitancia de salida: 110 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.115 typ Ohm
Encapsulados: TO251
Búsqueda de reemplazo de VBZFB15N10 MOSFET
- Selecciónⓘ de transistores por parámetros
VBZFB15N10 datasheet
..1. Size:1395K cn vbsemi
vbzfb15n10.pdf 
VBZFB15N10 www.VBsemi.com N-Channel 100 V (D-S) MOSFET FEATURES V VDS 100 DT-Trench Power MOSFET 175 C Junction Temperature RDS(on),typ VGS=10V m 115 100 % Rg Tested RDS(on),typ VGS=4.5V m 120 15 A ID APPLICATIONS Primary Side Switch TO-251 D G S G D S N-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Param
8.1. Size:1087K cn vbsemi
vbzfb12p10.pdf
VBZFB12P10 www.VBsemi.com P-Channel 100 V (D-S) MOSFET FEATURES -100 V VDS Halogen-free According to IEC 61249-2-21 m RDS(on),typ VGS=10V 215 Definition TrenchFET Power MOSFET RDS(on),typ VGS=4.5V 234 m 100 % Rg and UIS Tested A ID -9 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Power Switch DC/DC Converters TO-251 S G D G D S P-Cha
8.2. Size:660K cn vbsemi
vbzfb10n20.pdf
VBZFB10N20 www.VBsemi.com N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 200 0.270 at VGS = 10 V 10 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC TO-251 APPLICATIONS Primary Side Switch D G S G D S N-Channel MOSFET Top View ABSOLUTE MAXIM
9.1. Size:999K cn vbsemi
vbzfb40p04.pdf
VBZFB40P04 www.VBsemi.com P-Channel 4 0 V (D-S) MOSFET FEATURES -40 V Halogen-free According to IEC 61249-2-21 VDS Definition RDS(on),typ VGS=10V 10 m TrenchFET Power MOSFET RDS(on),typ VGS=4.5V 14 m 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC -55 A ID APPLICATIONS Power Switch DC/DC Converters S TO-251 G D G D S Top View
9.2. Size:1090K cn vbsemi
vbzfb60n03.pdf
VBZFB60N03 www.VBsemi.com N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS 30 FEATURES V TrenchFET Power MOSFET RDS(on) VGS = 10 V 2 m 100 % Rg and UIS Tested RDS(on) VGS = 4.5 V 2.4 m Compliant to RoHS Directive 2011/65/EU 110 ID A Configuration Single APPLICATIONS TO-251 D OR-ing Server DC/DC G Drain Connected to Drain-Tab G D S S N-C
9.3. Size:1179K cn vbsemi
vbzfb40p06.pdf
VBZFB40P06 www.VBsemi.com P-Channel 60 V (D-S) MOSFET FEATURES -60 V VDS Halogen-free According to IEC 61249-2-21 RDS(on),typ VGS=10V 48 m Definition TrenchFET Power MOSFET 57 RDS(on),typ VGS=4.5V m 100 % UIS Tested A ID -30 Compliant to RoHS Directive 2002/95/EC APPLICATIONS High Side Switch for Full Bridge Converter TO-251 DC/DC Converter for
9.4. Size:1220K cn vbsemi
vbzfb70n03.pdf
VBZFB70N03 www.VBsemi.com N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS 30 V 100 % Rg and UIS Tested 3.5 RDS(on) VGS = 10 V m Compliant to RoHS Directive 2011/65/EU RDS(on) VGS = 4.5 V 4.5 m APPLICATIONS 100 ID A Configuration Single OR-ing Server D TO-251 DC/DC G S G D S Top View N-Channel MOSFET
9.5. Size:1232K cn vbsemi
vbzfb50n03.pdf
VBZFB50N03 www.VBsemi.com N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY FEATURES VDS 30 V Halogen-free 10 RDS(on) VGS = 10 V m TrenchFET Gen III Power MOSFET 15 RDS(on) VGS = 4.5 V m 100 % Rg Tested RoHS ID 50 A COMPLIANT 100 % UIS Tested Configuration Single APPLICATIONS TO-251 DC/DC Conversion D - System Power G S N-Channel MOSFET G D S
9.6. Size:840K cn vbsemi
vbzfb50n06.pdf
VBZFB50N06 www.VBsemi.com N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) 60 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 10 V 0.010 Material categorization RDS(on) ( ) at VGS = 4.5 V 0.012 ID (A) 50 Configuration Single TO-251 D G S N-Channel MOSFET G D S Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless other
9.8. Size:821K cn vbsemi
vbzfb40n06.pdf
VBZFB40N06 www.VBsemi.com N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition RDS(on) ( ) at VGS = 10 V 0.032 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 4.5 V 0.036 100 % Rg and UIS Tested ID (A) 25 Compliant to RoHS Directive 2002/95/EC Configuration Single APPLICATIONS Power Supply - S
9.9. Size:961K cn vbsemi
vbzfb30n06.pdf
VBZFB30N06 www.VBsemi.com N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 60 Package with Low Thermal Resistance RDS(on) ( ) at VGS = 10 V 0.006 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 4.5 V 0.009 ID (A) 70 Configuration Single TO-251 D G S N-Channel MOSFET G D S Top View ABSOLUTE MAXIMUM RATINGS (TC = 25
9.10. Size:1326K cn vbsemi
vbzfb06n02.pdf
VBZFB06N02 www.VBsemi.com N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY FEATURES VDS 30 V Halogen-free RDS(on) VGS = 10 V 20 m TrenchFET Gen III Power MOSFET 28 RDS(on) VGS = 4.5 V m 100 % Rg Tested RoHS 35 ID A COMPLIANT 100 % UIS Tested Configuration Single APPLICATIONS TO-251 DC/DC Conversion D - System Power G S N-Channel MOSFET G D S
9.11. Size:1270K cn vbsemi
vbzfb40n03.pdf
VBZFB40N03 www.VBsemi.com N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY FEATURES VDS 30 V Halogen-free 15 RDS(on) VGS = 10 V m TrenchFET Gen III Power MOSFET 20 RDS(on) VGS = 4.5 V m 100 % Rg Tested RoHS 40 ID A COMPLIANT 100 % UIS Tested Configuration Single APPLICATIONS TO-251 DC/DC Conversion D - System Power G S N-Channel MOSFET G D
9.12. Size:946K cn vbsemi
vbzfb20n06.pdf
VBZFB20N06 www.VBsemi.com N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) 60 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 10 V 0.020 Material categorization RDS(on) ( ) at VGS = 4.5 V 0.025 ID (A) 35 Configuration Single TO-251 D G S N-Channel MOSFET G D S Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless other
9.13. Size:956K cn vbsemi
vbzfb20p06.pdf
VBZFB20P06 www.VBsemi.com P-Channel 60-V (D-S) MOSFET FEATURES -60 V VDS TrenchFET Power MOSFET m RDS(on),typ VGS=10V 66 100 % UIS Tested RDS(on),typ VGS=4.5V 80 m APPLICATIONS A ID -25 Load Switch TO-251 S G D P-Channel MOSFET G D S Top View ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) Parameter Symbol Limit Unit VDS Drain-Source V
9.14. Size:899K cn vbsemi
vbzfb80n03.pdf
VBZFB80N03 www.VBsemi.com N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY FEATURES VDS 30 V Halogen-free 6 RDS(on) VGS = 10 V m TrenchFET Gen III Power MOSFET RDS(on) VGS = 4.5 V 8 m 100 % Rg Tested RoHS ID 70 A COMPLIANT 100 % UIS Tested Configuration Single APPLICATIONS TO-251 DC/DC Conversion D - System Power G S N-Channel MOSFET G D S
9.15. Size:644K cn vbsemi
vbzfb40n10.pdf
VBZFB40N10 www.VBsemi.com N-Channel 200V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 0.056 at VGS = 10 V 200 30 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC TO-251 APPLICATIONS Primary Side Switch D Drain Connected to G Drain-Tab G D S S Top View N-
Otros transistores... VBZE80N06, VBZE80N10, VBZE80P03, VBZE90N03, VBZE9N03, VBZFB06N02, VBZFB10N20, VBZFB12P10, IRFP460, VBZFB20N06, VBZFB20P06, VBZFB30N06, VBZFB40N03, VBZFB40N06, VBZFB40N10, VBZFB40P03, VBZFB40P04
