FDC6310P Todos los transistores

April 2001 FDC6310P Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features These P-Channel 2.5V specified MOSFETs are 2.2 A, 20 V. R = 125 m @ V = 4.5 V DS(ON) GS produced using Fairchild Semiconductor's advanced R = 190 m @ V = 2.5 V DS(ON) GS PowerTrench process that has been especially tailored to minimize on-state resistance

December 2001 FDC6318P Dual P-Channel 1.8V PowerTrench Specified MOSFET General Description Features These P-Channel 1.8V specified MOSFETs are 2.5 A, 12 V. RDS(ON) = 90 m @ VGS = 4.5 V produced using Fairchild Semiconductor's advanced RDS(ON) = 125 m @ VGS = 2.5 V PowerTrench process that has been especially tailored RDS(ON) = 200 m

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FDC6312P www.VBsemi.tw Dual P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.075 at VGS = - 4.5V - 4.0 TrenchFET Power MOSFET - 20 2.7 nC 0.100 at VGS = - 2.5 V - 3.2 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch for Portable Ap