VBZFB30N06 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

VBZFB30N06www.VBsemi.comN-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 60 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.006 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.009ID (A)70Configuration SingleTO-251DGSN-Channel MOSFETG D STop ViewABSOLUTE MAXIMUM RATINGS (TC = 25

VBZFB40P04www.VBsemi.comP-Channel 4 0 V (D-S) MOSFETFEATURES-40 V Halogen-free According to IEC 61249-2-21VDSDefinitionRDS(on),typ VGS=10V 10 m TrenchFET Power MOSFETRDS(on),typ VGS=4.5V 14 m 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC-55 AID APPLICATIONS Power Switch DC/DC ConvertersSTO-251GDG D STop View

VBZFB60N03www.VBsemi.comN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYVDS 30 FEATURESV TrenchFET Power MOSFETRDS(on) VGS = 10 V 2m 100 % Rg and UIS TestedRDS(on) VGS = 4.5 V 2.4 m Compliant to RoHS Directive 2011/65/EU110ID AConfiguration SingleAPPLICATIONSTO-251D OR-ing Server DC/DCGDrain Connected toDrain-TabG D SSN-C

VBZFB40P06www.VBsemi.comP-Channel 60 V (D-S) MOSFETFEATURES-60 VVDS Halogen-free According to IEC 61249-2-21RDS(on),typ VGS=10V 48 mDefinition TrenchFET Power MOSFET57RDS(on),typ VGS=4.5V m 100 % UIS TestedAID -30 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS High Side Switch for Full Bridge ConverterTO-251 DC/DC Converter for

VBZFB70N03www.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS 30V 100 % Rg and UIS Tested3.5RDS(on) VGS = 10 V m Compliant to RoHS Directive 2011/65/EURDS(on) VGS = 4.5 V 4.5mAPPLICATIONS100ID AConfiguration Single OR-ing ServerDTO-251 DC/DCGSG D STop ViewN-Channel MOSFET

VBZFB12P10www.VBsemi.comP-Channel 100 V (D-S) MOSFETFEATURES-100 VVDS Halogen-free According to IEC 61249-2-21mRDS(on),typ VGS=10V 215Definition TrenchFET Power MOSFETRDS(on),typ VGS=4.5V 234 m 100 % Rg and UIS TestedAID -9 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Power Switch DC/DC ConvertersTO-251SGDG D SP-Cha

VBZFB50N03www.VBsemi.comN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYFEATURESVDS 30V Halogen-free10RDS(on) VGS = 10 V m TrenchFET Gen III Power MOSFET15RDS(on) VGS = 4.5 V m 100 % Rg TestedRoHSID 50ACOMPLIANT 100 % UIS TestedConfiguration SingleAPPLICATIONSTO-251 DC/DC ConversionD- System PowerGSN-Channel MOSFET G D S

VBZFB50N06www.VBsemi.comN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) 60 TrenchFET Power MOSFETRDS(on) () at VGS = 10 V 0.010 Material categorization:RDS(on) () at VGS = 4.5 V 0.012ID (A) 50Configuration SingleTO-251DGSN-Channel MOSFETG D STop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless other

VBZFB40P03www.VBsemi.comP-Channel 30-V (D-S) MOSFET-30 VVDSFEATURES Halogen-free According to IEC 61249-2-21RDS(on),typ VGS=10V 18 mDefinitionRDS(on),typ VGS=4.5V 22 m TrenchFET Power MOSFETAID -35 100 % Rg TestedAPPLICATIONS Load SwitchTO-251 Battery SwitchSGDP-Channel MOSFETG D STop ViewABSOLUTE MAXIMUM RATINGS TA = 25

VBZFB40N06www.VBsemi.comN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60DefinitionRDS(on) () at VGS = 10 V 0.032 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.036 100 % Rg and UIS TestedID (A)25 Compliant to RoHS Directive 2002/95/ECConfiguration SingleAPPLICATIONS Power Supply- S

VBZFB06N02www.VBsemi.comN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYFEATURESVDS 30V Halogen-freeRDS(on) VGS = 10 V 20m TrenchFET Gen III Power MOSFET28RDS(on) VGS = 4.5 V m 100 % Rg TestedRoHS35ID ACOMPLIANT 100 % UIS TestedConfiguration SingleAPPLICATIONSTO-251 DC/DC ConversionD- System PowerGSN-Channel MOSFET G D S

VBZFB40N03www.VBsemi.comN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYFEATURESVDS 30V Halogen-free15RDS(on) VGS = 10 V m TrenchFET Gen III Power MOSFET20RDS(on) VGS = 4.5 V m 100 % Rg TestedRoHS40ID ACOMPLIANT 100 % UIS TestedConfiguration SingleAPPLICATIONSTO-251 DC/DC ConversionD- System PowerGSN-Channel MOSFET G D

VBZFB20N06www.VBsemi.comN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) 60 TrenchFET Power MOSFETRDS(on) () at VGS = 10 V 0.020 Material categorization:RDS(on) () at VGS = 4.5 V 0.025ID (A) 35Configuration SingleTO-251DGSN-Channel MOSFETG D STop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless other

VBZFB20P06www.VBsemi.comP-Channel 60-V (D-S) MOSFETFEATURES-60 VVDS TrenchFET Power MOSFETmRDS(on),typ VGS=10V 66 100 % UIS TestedRDS(on),typ VGS=4.5V 80 mAPPLICATIONSAID -25 Load SwitchTO-251SGDP-Channel MOSFETG D STop ViewABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Parameter Symbol Limit UnitVDSDrain-Source V

VBZFB15N10www.VBsemi.comN-Channel 100 V (D-S) MOSFETFEATURESVVDS 100 DT-Trench Power MOSFET 175 C Junction TemperatureRDS(on),typ VGS=10V m115 100 % Rg TestedRDS(on),typ VGS=4.5V m12015 AID APPLICATIONS Primary Side SwitchTO-251DGSG D SN-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Param

VBZFB80N03www.VBsemi.comN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYFEATURESVDS 30V Halogen-free6RDS(on) VGS = 10 V m TrenchFET Gen III Power MOSFETRDS(on) VGS = 4.5 V 8m 100 % Rg TestedRoHSID 70ACOMPLIANT 100 % UIS TestedConfiguration SingleAPPLICATIONSTO-251 DC/DC ConversionD- System PowerGSN-Channel MOSFET G D S

VBZFB40N10www.VBsemi.comN-Channel 200V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature0.056 at VGS = 10 V 200 30 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTO-251APPLICATIONS Primary Side SwitchDDrain Connected to GDrain-TabG D SSTop ViewN-

VBZFB10N20www.VBsemi.comN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature200 0.270 at VGS = 10 V10 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTO-251APPLICATIONS Primary Side SwitchDGSG D SN-Channel MOSFETTop ViewABSOLUTE MAXIM