VBZFB80N03 Todos los transistores

 ..1. Size:899K  cn vbsemi
 vbzfb80n03.pdf

VBZFB80N03 www.VBsemi.com N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY FEATURES VDS 30 V Halogen-free 6 RDS(on) VGS = 10 V m TrenchFET Gen III Power MOSFET RDS(on) VGS = 4.5 V 8 m 100 % Rg Tested RoHS ID 70 A COMPLIANT 100 % UIS Tested Configuration Single APPLICATIONS TO-251 DC/DC Conversion D - System Power G S N-Channel MOSFET G D S

 9.1. Size:999K  cn vbsemi
 vbzfb40p04.pdf

VBZFB40P04 www.VBsemi.com P-Channel 4 0 V (D-S) MOSFET FEATURES -40 V Halogen-free According to IEC 61249-2-21 VDS Definition RDS(on),typ VGS=10V 10 m TrenchFET Power MOSFET RDS(on),typ VGS=4.5V 14 m 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC -55 A ID APPLICATIONS Power Switch DC/DC Converters S TO-251 G D G D S Top View

 9.2. Size:1090K  cn vbsemi
 vbzfb60n03.pdf

VBZFB60N03 www.VBsemi.com N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS 30 FEATURES V TrenchFET Power MOSFET RDS(on) VGS = 10 V 2 m 100 % Rg and UIS Tested RDS(on) VGS = 4.5 V 2.4 m Compliant to RoHS Directive 2011/65/EU 110 ID A Configuration Single APPLICATIONS TO-251 D OR-ing Server DC/DC G Drain Connected to Drain-Tab G D S S N-C

 9.3. Size:1179K  cn vbsemi
 vbzfb40p06.pdf

VBZFB40P06 www.VBsemi.com P-Channel 60 V (D-S) MOSFET FEATURES -60 V VDS Halogen-free According to IEC 61249-2-21 RDS(on),typ VGS=10V 48 m Definition TrenchFET Power MOSFET 57 RDS(on),typ VGS=4.5V m 100 % UIS Tested A ID -30 Compliant to RoHS Directive 2002/95/EC APPLICATIONS High Side Switch for Full Bridge Converter TO-251 DC/DC Converter for

 9.4. Size:1220K  cn vbsemi
 vbzfb70n03.pdf

VBZFB70N03 www.VBsemi.com N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS 30 V 100 % Rg and UIS Tested 3.5 RDS(on) VGS = 10 V m Compliant to RoHS Directive 2011/65/EU RDS(on) VGS = 4.5 V 4.5 m APPLICATIONS 100 ID A Configuration Single OR-ing Server D TO-251 DC/DC G S G D S Top View N-Channel MOSFET

 9.5. Size:1087K  cn vbsemi
 vbzfb12p10.pdf

VBZFB12P10 www.VBsemi.com P-Channel 100 V (D-S) MOSFET FEATURES -100 V VDS Halogen-free According to IEC 61249-2-21 m RDS(on),typ VGS=10V 215 Definition TrenchFET Power MOSFET RDS(on),typ VGS=4.5V 234 m 100 % Rg and UIS Tested A ID -9 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Power Switch DC/DC Converters TO-251 S G D G D S P-Cha

 9.6. Size:1232K  cn vbsemi
 vbzfb50n03.pdf

VBZFB50N03 www.VBsemi.com N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY FEATURES VDS 30 V Halogen-free 10 RDS(on) VGS = 10 V m TrenchFET Gen III Power MOSFET 15 RDS(on) VGS = 4.5 V m 100 % Rg Tested RoHS ID 50 A COMPLIANT 100 % UIS Tested Configuration Single APPLICATIONS TO-251 DC/DC Conversion D - System Power G S N-Channel MOSFET G D S

 9.7. Size:840K  cn vbsemi
 vbzfb50n06.pdf

VBZFB50N06 www.VBsemi.com N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) 60 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 10 V 0.010 Material categorization RDS(on) ( ) at VGS = 4.5 V 0.012 ID (A) 50 Configuration Single TO-251 D G S N-Channel MOSFET G D S Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless other

 9.8. Size:920K  cn vbsemi
 vbzfb40p03.pdf

 9.9. Size:821K  cn vbsemi
 vbzfb40n06.pdf

VBZFB40N06 www.VBsemi.com N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition RDS(on) ( ) at VGS = 10 V 0.032 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 4.5 V 0.036 100 % Rg and UIS Tested ID (A) 25 Compliant to RoHS Directive 2002/95/EC Configuration Single APPLICATIONS Power Supply - S

 9.10. Size:961K  cn vbsemi
 vbzfb30n06.pdf

VBZFB30N06 www.VBsemi.com N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 60 Package with Low Thermal Resistance RDS(on) ( ) at VGS = 10 V 0.006 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 4.5 V 0.009 ID (A) 70 Configuration Single TO-251 D G S N-Channel MOSFET G D S Top View ABSOLUTE MAXIMUM RATINGS (TC = 25

 9.11. Size:1326K  cn vbsemi
 vbzfb06n02.pdf

VBZFB06N02 www.VBsemi.com N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY FEATURES VDS 30 V Halogen-free RDS(on) VGS = 10 V 20 m TrenchFET Gen III Power MOSFET 28 RDS(on) VGS = 4.5 V m 100 % Rg Tested RoHS 35 ID A COMPLIANT 100 % UIS Tested Configuration Single APPLICATIONS TO-251 DC/DC Conversion D - System Power G S N-Channel MOSFET G D S

 9.12. Size:1270K  cn vbsemi
 vbzfb40n03.pdf

VBZFB40N03 www.VBsemi.com N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY FEATURES VDS 30 V Halogen-free 15 RDS(on) VGS = 10 V m TrenchFET Gen III Power MOSFET 20 RDS(on) VGS = 4.5 V m 100 % Rg Tested RoHS 40 ID A COMPLIANT 100 % UIS Tested Configuration Single APPLICATIONS TO-251 DC/DC Conversion D - System Power G S N-Channel MOSFET G D

 9.13. Size:946K  cn vbsemi
 vbzfb20n06.pdf

VBZFB20N06 www.VBsemi.com N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) 60 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 10 V 0.020 Material categorization RDS(on) ( ) at VGS = 4.5 V 0.025 ID (A) 35 Configuration Single TO-251 D G S N-Channel MOSFET G D S Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless other

 9.14. Size:956K  cn vbsemi
 vbzfb20p06.pdf

VBZFB20P06 www.VBsemi.com P-Channel 60-V (D-S) MOSFET FEATURES -60 V VDS TrenchFET Power MOSFET m RDS(on),typ VGS=10V 66 100 % UIS Tested RDS(on),typ VGS=4.5V 80 m APPLICATIONS A ID -25 Load Switch TO-251 S G D P-Channel MOSFET G D S Top View ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) Parameter Symbol Limit Unit VDS Drain-Source V

 9.15. Size:1395K  cn vbsemi
 vbzfb15n10.pdf

VBZFB15N10 www.VBsemi.com N-Channel 100 V (D-S) MOSFET FEATURES V VDS 100 DT-Trench Power MOSFET 175 C Junction Temperature RDS(on),typ VGS=10V m 115 100 % Rg Tested RDS(on),typ VGS=4.5V m 120 15 A ID APPLICATIONS Primary Side Switch TO-251 D G S G D S N-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Param

 9.16. Size:644K  cn vbsemi
 vbzfb40n10.pdf

VBZFB40N10 www.VBsemi.com N-Channel 200V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 0.056 at VGS = 10 V 200 30 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC TO-251 APPLICATIONS Primary Side Switch D Drain Connected to G Drain-Tab G D S S Top View N-

 9.17. Size:660K  cn vbsemi
 vbzfb10n20.pdf

VBZFB10N20 www.VBsemi.com N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 200 0.270 at VGS = 10 V 10 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC TO-251 APPLICATIONS Primary Side Switch D G S G D S N-Channel MOSFET Top View ABSOLUTE MAXIM