VBZM120N15 Todos los transistores

 ..1. Size:1289K  cn vbsemi
 vbzm120n15.pdf

VBZM120N15 www.VBsemi.com N-Channel 150 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 150 Package with low thermal resistance RDS(on) ( ) at VGS = 10 V 0.075 100 % Rg and UIS tested ID (A) 20 Configuration Single Package TO-220 TO-220AB D G S S N-Channel MOSFET D G Top View S ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise n

 8.1. Size:841K  cn vbsemi
 vbzm12p10.pdf

VBZM12P10 www.VBsemi.com P-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS -100 V Definition RDS(on) VGS = 10 V 167 m TrenchFET Power MOSFET 100 % Rg and UIS Tested RDS(on) VGS = 4.5 V 178 m Compliant to RoHS Directive 2002/95/EC ID -18 A Configuration Single APPLICATIONS Power Switch Load Switch

 9.1. Size:984K  cn vbsemi
 vbzm100n04.pdf

VBZM100N04 www.VBsemi.com N-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY FEATURES VDS TrenchFET Power MOSFET 40 V RDS(on) VGS = 10 V 2 100 % Rg and UIS Tested m RoHS ID 180 A COMPLIANT APPLICATIONS Configuration Single Synchronous Rectification Power Supplies TO-220AB D G S G D S N-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless ot

 9.2. Size:781K  cn vbsemi
 vbzm100n03.pdf

VBZM100N03 www.VBsemi.com N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 30 Definition RDS(on) ( ) at VGS = 10 V 0.001 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 4.5 V 0.002 Package with Low Thermal Resistance ID (A) 260 100 % Rg and UIS Tested Configuration Single Compliant to RoHS Directive 20

 9.3. Size:1125K  cn vbsemi
 vbzm13n50.pdf

VBZM13N50 www.VBsemi.com N hannel 500 D S Power MOSFET FEATURES PRODUCT SUMMARY Lower Gate Charge Qg Results in Simpler Drive VDS (V) 500 Reqirements RDS(on) ( )VGS = 10 V 0.660 Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 81 Ruggedness Qgs (nC) 20 Qgd (nC) 36 Fully Characterized Capacitance and Avalanche Voltage Configuration Single Complian

 9.4. Size:1809K  cn vbsemi
 vbzm18n20.pdf

VBZM18N20 www.VBsemi.com N-Channel 200 V (D-S) MOSFET PRODUCT SUMMARY FEATURES VDS (V) 200 TrenchFET Power MOSFET RDS(on) ( )VGS = 10 V 0.91 175 C Junction Temperature Qg (Max.) (nC) 13 PWM Optimized 100 % Rg Tested Qgs (nC) 3.0 Compliant to RoHS Directive 2002/95/EC Qgd (nC) 7.9 Configuration Single APPLICATIONS Primary Side Switch TO-220AB D G

 9.5. Size:1256K  cn vbsemi
 vbzm150n03.pdf

VBZM150N03 www.VBsemi.com N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY FEATURES VDS (V) 30 DT-Trench Power MOSFET 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 10 V 0.0020 Compliant to RoHS Directive 2011/65/EU RDS(on) ( ) at VGS = 4.5 V 0.0028 ID (A) 140 APPLICATIONS Configuration Single OR-ing TO-220AB Server DC/DC D G S G D S N-Channel MOS

 9.6. Size:637K  cn vbsemi
 vbzm150n10.pdf

VBZM150N10 www.VBsemi.com N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) RDS(on) ( )ID (A) 175 C Junction Temperature RoHS 0.127at VGS = 10 V 100 18 COMPLIANT Low Thermal Resistance Package 100 % Rg Tested APPLICATIONS Isolated DC/DC Converters TO-220AB D G S G D S N-Channel MOSFET Top View ABSOLUTE M