VBZM40P06 Todos los transistores

 ..1. Size:895K  cn vbsemi
 vbzm40p06.pdf

VBZM40P06 www.VBsemi.com P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY FEATURES VDS -60 V TrenchFET Power MOSFET RDS(on) VGS = 10 V 19 m 100 % UIS Tested RDS(on) VGS = 4.5 V m 26 APPLICATIONS ID -50 A Load Switch Configuration Single TO-220AB S G D G D S P-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) Paramete

 8.1. Size:813K  cn vbsemi
 vbzm40n03.pdf

VBZM40N03 www.VBsemi.com N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY FEATURES VDS (V) 30 TrenchFET Power MOSFET 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 10 V 0.003 Compliant to RoHS Directive 2011/65/EU RDS(on) ( ) at VGS = 4.5 V 0.004 ID (A) 120 APPLICATIONS Configuration Single OR-ing TO-220AB Server D DC/DC G S G D S N-Channel MOSFET

 8.2. Size:1179K  cn vbsemi
 vbzm40n10.pdf

VBZM40N10 www.VBsemi.com N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY ThunderFET power MOSFET VDS (V) 100 Maximum 175 C junction temperature RDS(on) ( ) at VGS = 10 V 0.005 a 100 % Rg and UIS tested ID ( 120 (A) Material categorization Configuration Single for definitions of compliance please see D TO-220AB G S S S D G N-Channel MOSFET

 9.1. Size:744K  cn vbsemi
 vbzm4n20.pdf

VBZM4N20 www.VBsemi.com N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 200 0.110 at VGS = 10 V 2 0 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC TO-220AB APPLICATIONS Primary Side Switch D DRAIN connected to TAB G G D S Top View S N-Ch