VBZM60N06 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: VBZM60N06

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 136 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 120 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15 nS

Cossⓘ - Capacitancia de salida: 570 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.005 typ Ohm

Encapsulados: TO220AB

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VBZM60N06 datasheet

 ..1. Size:846K  cn vbsemi
vbzm60n06.pdf pdf_icon

VBZM60N06

VBZM60N06 www.VBsemi.com N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS 60 V TrenchFET Power MOSFET RDS(on) VGS = 10 V 5 m Material categorization ID 120 A Configuration Single TO-220AB D G S N-Channel MOSFET G D S ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limit Unit VGS Gate-So

 8.1. Size:936K  cn vbsemi
vbzm60p03.pdf pdf_icon

VBZM60N06

VBZM60P03 www.VBsemi.com P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS -30 V TrenchFET Power MOSFET RDS(on) VGS = 10 V 8 m 100 % Rg Tested RoHS RDS(on) VGS = 4.5 V 11 m COMPLIANT 100 % UIS Tested ID -70 A APPLICATIONS Configuration Single Load Switch Notebook Adaptor Switch TO-220AB S G G D S D Top View P-C

 9.1. Size:825K  cn vbsemi
vbzm630.pdf pdf_icon

VBZM60N06

VBZM630 www.VBsemi.com N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY DT-Trench Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 0.270 at VGS =10V 10 200 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch TO-220AB D G S N-Channel MOSFET G D S Top View ABSOLUTE MAXIMUM RAT

 9.2. Size:931K  cn vbsemi
vbzm630y.pdf pdf_icon

VBZM60N06

VBZM630Y www.VBsemi.com N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature RoHS 0.058at VGS =10V 35 200 COMPLIANT New Low Thermal Resistance Package Compliant to RoHS Directive 2002/95/EC APPLICATIONS TO-220AB Industrial D G G D S S N-Channel MOSFET ABSOLUTE MAXIMUM RA

Otros transistores... VBZM30N06, VBZM3710, VBZM40N03, VBZM40N10, VBZM40P06, VBZM4N20, VBZM50N03, VBZM50N06, IRFP450, VBZM60P03, VBZM630, VBZM630Y, VBZM75N03, VBZM75N80, VBZM75NF75, VBZM80N03, VBZM80N04