VBZM8N60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: VBZM8N60
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 170 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 49(max) nC
   trⓘ - Tiempo de subida: 25 nS
   Cossⓘ - Capacitancia de salida: 180 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.780(typ) Ohm
   Paquete / Cubierta: TO220AB

Búsqueda de reemplazo de MOSFET VBZM8N60

VBZM8N60 Datasheet (PDF)

..1. Size:1406K cn vbsemi
vbzm8n60.pdf

VBZM8N60www.VBsemi.comN hannel 600 D S P ower MOSFETFEATURESPRODUCT SUMMARY Low gate charge Qg results in simple driveVDS (V) 600AvailablerequirementRDS(on) ()VGS = 10 V0.780 Improved gate, avalanche and dynamic dV/dtQg max. (nC) 49ruggednessQgs (nC) 13 Fully characterized capacitance and avalanche voltageQgd (nC) 20and currentConfiguration Si

8.1. Size:1294K cn vbsemi
vbzm8n50.pdf

VBZM8N50www.VBsemi.comN hannel 500 D S Power MOSFETFEATURESPRODUCT SUMMARY Low gate charge Qg results in simple driveVDS (V) 500requirementRDS(on) ()VGS = 10 V 1.1 Improved gate, avalanche and dynamic dV/dtQg max. (nC) 49ruggednessQgs (nC) 13 Fully characterized capacitance and avalanche voltageQgd (nC) 20and currentConfiguration SingleDTO-2

9.1. Size:914K cn vbsemi
vbzm80n04.pdf

VBZM80N04www.VBsemi.comN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS 40 V 100 % Rg and UIS Tested6RDS(on) VGS = 10 V mRoHSID 110AAPPLICATIONS COMPLIANT Configuration Single Synchronous Rectification Power SuppliesTO-220ABDGSG D SN-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS TA = 25 C, unless

9.2. Size:937K cn vbsemi
vbzm80n03.pdf

VBZM80N03www.VBsemi.comN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 100 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.0038 AEC-Q101 QualifieddID (A) a 180 100 % Rg and UIS TestedConfiguration SingleDTO-220GTop ViewSN-Channel MOSFETG D SABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless other

9.3. Size:835K cn vbsemi
vbzm80n80.pdf

VBZM80N80www.VBsemi.comN-Channel 8 0-V (D-S) Super Trench Power MOSFETFEATURESPRODUCT SUMMARY Super Trench technology Power MOSFETVDS (V) RDS(on) () MAX. ID (A) Qg (TYP.) Excellent gate charge x Rds (on) product(FOM)0.0034 at VGS = 10 V 19580 75nC Very low on-resfistance Rds (on)0.0036 at VGS = 7.5 V 185 100 % Rg and UIS TestedTO-220ABAPPLICATIONSD

9.4. Size:810K cn vbsemi
vbzm80n10.pdf

VBZM80N10www.VBsemi.comN-Channel 100-V (D-S) 175 C MOSFETPRODUCT SUMMARYFEATURESVDS (V) TrenchFET Power MOSFET100 175 C Maximum Junction TemperatureRDS(on) () at VGS = 10 V 0.009 Compliant to RoHS Directive 2002/95/ECRDS(on) () at VGS = 4.5 V0.020ID (A)100Configuration SingleTO-220ABDGSN-Channel MOSFETG D S ABSOLUTE MAXIMUM RATIN

9.5. Size:1219K cn vbsemi
vbzm80n06.pdf

VBZM80N06www.VBsemi.comN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60DefinitionRDS(on) () at VGS = 10 V 0.003 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V0.009 Package with Low Thermal ResistanceID (A) 210 100 % Rg and UIS TestedConfiguration Single Compliant to RoHS Directive 2002/9

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