VBZM8N60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: VBZM8N60
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 170 W
Voltaje máximo drenador - fuente |Vds|: 600 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 8 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 49(max) nC
Tiempo de subida (tr): 25 nS
Conductancia de drenaje-sustrato (Cd): 180 pF
Resistencia entre drenaje y fuente RDS(on): 0.780(typ) Ohm
Paquete / Cubierta: TO220AB
Búsqueda de reemplazo de MOSFET VBZM8N60
VBZM8N60 Datasheet (PDF)
vbzm8n60.pdf
VBZM8N60www.VBsemi.comN hannel 600 D S P ower MOSFETFEATURESPRODUCT SUMMARY Low gate charge Qg results in simple driveVDS (V) 600AvailablerequirementRDS(on) ()VGS = 10 V0.780 Improved gate, avalanche and dynamic dV/dtQg max. (nC) 49ruggednessQgs (nC) 13 Fully characterized capacitance and avalanche voltageQgd (nC) 20and currentConfiguration Si
vbzm8n50.pdf
VBZM8N50www.VBsemi.comN hannel 500 D S Power MOSFETFEATURESPRODUCT SUMMARY Low gate charge Qg results in simple driveVDS (V) 500requirementRDS(on) ()VGS = 10 V 1.1 Improved gate, avalanche and dynamic dV/dtQg max. (nC) 49ruggednessQgs (nC) 13 Fully characterized capacitance and avalanche voltageQgd (nC) 20and currentConfiguration SingleDTO-2
vbzm80n04.pdf
VBZM80N04www.VBsemi.comN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS 40 V 100 % Rg and UIS Tested6RDS(on) VGS = 10 V mRoHSID 110AAPPLICATIONS COMPLIANT Configuration Single Synchronous Rectification Power SuppliesTO-220ABDGSG D SN-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS TA = 25 C, unless
vbzm80n03.pdf
VBZM80N03www.VBsemi.comN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 100 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.0038 AEC-Q101 QualifieddID (A) a 180 100 % Rg and UIS TestedConfiguration SingleDTO-220GTop ViewSN-Channel MOSFETG D SABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless other
vbzm80n80.pdf
VBZM80N80www.VBsemi.comN-Channel 8 0-V (D-S) Super Trench Power MOSFETFEATURESPRODUCT SUMMARY Super Trench technology Power MOSFETVDS (V) RDS(on) () MAX. ID (A) Qg (TYP.) Excellent gate charge x Rds (on) product(FOM)0.0034 at VGS = 10 V 19580 75nC Very low on-resfistance Rds (on)0.0036 at VGS = 7.5 V 185 100 % Rg and UIS TestedTO-220ABAPPLICATIONSD
vbzm80n10.pdf
VBZM80N10www.VBsemi.comN-Channel 100-V (D-S) 175 C MOSFETPRODUCT SUMMARYFEATURESVDS (V) TrenchFET Power MOSFET100 175 C Maximum Junction TemperatureRDS(on) () at VGS = 10 V 0.009 Compliant to RoHS Directive 2002/95/ECRDS(on) () at VGS = 4.5 V0.020ID (A)100Configuration SingleTO-220ABDGSN-Channel MOSFETG D S ABSOLUTE MAXIMUM RATIN
vbzm80n06.pdf
VBZM80N06www.VBsemi.comN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60DefinitionRDS(on) () at VGS = 10 V 0.003 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V0.009 Package with Low Thermal ResistanceID (A) 210 100 % Rg and UIS TestedConfiguration Single Compliant to RoHS Directive 2002/9
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