VBZMB12N65 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: VBZMB12N65

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 34 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 12 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 300 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.65 typ Ohm

Encapsulados: TO220FP

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VBZMB12N65 datasheet

 ..1. Size:617K  cn vbsemi
 vbzmb12n65.pdf pdf_icon

VBZMB12N65

VBZMB12N65 www.VBsemi.com N-Channel 650V (D-S) Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.68 43 Reduced switching and conduction losses Qg max. (nC) Ultra low gate charge (Qg) 5 Qgs (nC) Avalanche energy rated (UIS) 22 Qgd (nC) Configu

 8.1. Size:617K  cn vbsemi
 vbzmb10n65.pdf pdf_icon

VBZMB12N65

VBZMB10N65 www.VBsemi.com N hannel 650 D S Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.9 Reduced switching and conduction losses Qg max. (nC) 57 Ultra low gate charge (Qg) Qgs (nC) 4.0 Avalanche energy rated (UIS) Qgd (nC) 5.4 Config

 8.2. Size:1258K  cn vbsemi
 vbzmb18n50.pdf pdf_icon

VBZMB12N65

VBZMB18N50 www.VBsemi.com N-Channel (D-S) Power MOSFET 550V FEATURES PRODUCT SUMMARY Optimal Design VDS (V) 550 - Low Area Specific On-Resistance RDS(on) max. at 25 C ( ) VGS = 10 V 0.26 - Low Input Capacitance (Ciss) Qg max. (nC) 150 - Reduced Capacitive Switching Losses Qgs (nC) 12 - High Body Diode Ruggedness Qgd (nC) 25 - Avalanche Energy Rated (UIS) Configuration

 8.3. Size:827K  cn vbsemi
 vbzmb18n65.pdf pdf_icon

VBZMB12N65

VBZMB18N65 www.VBsemi.com N-Channel 650V (D-S) MOSFET PRODUCT SUMMARY FEATURES VDS (V) at TJ max. 650 Reduced trr, Qrr, and IRRM RDS(on) max. ( ) at 25 C VGS = 10 V 0.50 Low figure-of-merit (FOM) Ron x Qg Qg max. (nC) Low input capacitance (Ciss) 71 Qgs (nC) 14 Low switching losses due to reduced Qrr Ultra low gate charge (Qg) Qgd (nC) 33 Avalanche ener

MOSTRAR MÁS

Otros transistores... VBZM80N03, VBZM80N04, VBZM80N06, VBZM80N10, VBZM80N80, VBZM8N50, VBZM8N60, VBZMB10N65, IRF520, VBZMB13N50, VBZMB18N50, VBZMB18N65, VBZMB20N65, VBZMB20N65S, VBZMB2N65, VBZMB4N65, VBZMB7N65