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VBZMB12N65 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: VBZMB12N65
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 34 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 300 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.65(typ) Ohm
   Paquete / Cubierta: TO220FP
 

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VBZMB12N65 Datasheet (PDF)

 ..1. Size:617K  cn vbsemi
 vbzmb12n65.pdf pdf_icon

VBZMB12N65

VBZMB12N65www.VBsemi.comN-Channel 650V (D-S) Power MOSFETFEATURESPRODUCT SUMMARYVDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.6843 Reduced switching and conduction lossesQg max. (nC) Ultra low gate charge (Qg)5Qgs (nC) Avalanche energy rated (UIS)22Qgd (nC)Configu

 8.1. Size:617K  cn vbsemi
 vbzmb10n65.pdf pdf_icon

VBZMB12N65

VBZMB10N65 www.VBsemi.comN hannel 650 D S Power MOSFETFEATURESPRODUCT SUMMARYVDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.9 Reduced switching and conduction lossesQg max. (nC)57 Ultra low gate charge (Qg)Qgs (nC)4.0 Avalanche energy rated (UIS)Qgd (nC) 5.4Config

 8.2. Size:1258K  cn vbsemi
 vbzmb18n50.pdf pdf_icon

VBZMB12N65

VBZMB18N50www.VBsemi.comN-Channel (D-S) Power MOSFET550V FEATURESPRODUCT SUMMARY Optimal DesignVDS (V) 550- Low Area Specific On-ResistanceRDS(on) max. at 25 C () VGS = 10 V 0.26- Low Input Capacitance (Ciss)Qg max. (nC) 150- Reduced Capacitive Switching LossesQgs (nC) 12- High Body Diode RuggednessQgd (nC) 25- Avalanche Energy Rated (UIS)Configuration

 8.3. Size:827K  cn vbsemi
 vbzmb18n65.pdf pdf_icon

VBZMB12N65

VBZMB18N65www.VBsemi.comN-Channel 650V (D-S) MOSFETPRODUCT SUMMARYFEATURESVDS (V) at TJ max. 650 Reduced trr, Qrr, and IRRMRDS(on) max. () at 25 C VGS = 10 V 0.50 Low figure-of-merit (FOM) Ron x QgQg max. (nC) Low input capacitance (Ciss)71Qgs (nC) 14 Low switching losses due to reduced Qrr Ultra low gate charge (Qg)Qgd (nC) 33 Avalanche ener

MOSTRAR MÁS

Otros transistores... VBZM80N03 , VBZM80N04 , VBZM80N06 , VBZM80N10 , VBZM80N80 , VBZM8N50 , VBZM8N60 , VBZMB10N65 , CS150N03A8 , VBZMB13N50 , VBZMB18N50 , VBZMB18N65 , VBZMB20N65 , VBZMB20N65S , VBZMB2N65 , VBZMB4N65 , VBZMB7N65 .

History: IRFS4115 | 2SK1122 | FDWS9510L-F085 | KHB1D0N60I | PSA13N50 | AUIRLR3705Z | SWD040R03VLT

 

 
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