VBZMB13N50 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: VBZMB13N50

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 250 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 13 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 39 nS

Cossⓘ - Capacitancia de salida: 290 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.8 Ohm

Encapsulados: TO220FP

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VBZMB13N50 datasheet

 ..1. Size:1077K  cn vbsemi
 vbzmb13n50.pdf pdf_icon

VBZMB13N50

VBZMB13N50 www.VBsemi.com N-Channel (D-S) Power MOSFET 500V FEATURES PRODUCT SUMMARY Lower Gate Charge Qg Results in Simpler Drive VDS (V) 500 Available Reqirements RDS(on) ( )VGS = 10 V 0.80 Improved Gate, Avalanche and Dynamic dV/dt Available Qg (Max.) (nC) 81 Ruggedness Qgs (nC) 20 Qgd (nC) 36 Fully Characterized Capacitance and Avalanche Voltage Configuratio

 8.1. Size:617K  cn vbsemi
 vbzmb12n65.pdf pdf_icon

VBZMB13N50

VBZMB12N65 www.VBsemi.com N-Channel 650V (D-S) Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.68 43 Reduced switching and conduction losses Qg max. (nC) Ultra low gate charge (Qg) 5 Qgs (nC) Avalanche energy rated (UIS) 22 Qgd (nC) Configu

 8.2. Size:617K  cn vbsemi
 vbzmb10n65.pdf pdf_icon

VBZMB13N50

VBZMB10N65 www.VBsemi.com N hannel 650 D S Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.9 Reduced switching and conduction losses Qg max. (nC) 57 Ultra low gate charge (Qg) Qgs (nC) 4.0 Avalanche energy rated (UIS) Qgd (nC) 5.4 Config

 8.3. Size:1258K  cn vbsemi
 vbzmb18n50.pdf pdf_icon

VBZMB13N50

VBZMB18N50 www.VBsemi.com N-Channel (D-S) Power MOSFET 550V FEATURES PRODUCT SUMMARY Optimal Design VDS (V) 550 - Low Area Specific On-Resistance RDS(on) max. at 25 C ( ) VGS = 10 V 0.26 - Low Input Capacitance (Ciss) Qg max. (nC) 150 - Reduced Capacitive Switching Losses Qgs (nC) 12 - High Body Diode Ruggedness Qgd (nC) 25 - Avalanche Energy Rated (UIS) Configuration

MOSTRAR MÁS

Otros transistores... VBZM80N04, VBZM80N06, VBZM80N10, VBZM80N80, VBZM8N50, VBZM8N60, VBZMB10N65, VBZMB12N65, IRF2807, VBZMB18N50, VBZMB18N65, VBZMB20N65, VBZMB20N65S, VBZMB2N65, VBZMB4N65, VBZMB7N65, VBZMB8N60