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WNM2016-3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WNM2016-3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 1.25 W
   Voltaje máximo drenador - fuente |Vds|: 20 V
   Voltaje máximo fuente - puerta |Vgs|: 12 V
   Corriente continua de drenaje |Id|: 5 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 1 V
   Carga de la puerta (Qg): 12 nC
   Tiempo de subida (tr): 17 nS
   Conductancia de drenaje-sustrato (Cd): 105 pF
   Resistencia entre drenaje y fuente RDS(on): 0.028(typ) Ohm
   Paquete / Cubierta: SOT23

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WNM2016-3 Datasheet (PDF)

 ..1. Size:1478K  cn vbsemi
wnm2016-3.pdf

WNM2016-3
WNM2016-3

WNM2016-3www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC

 7.1. Size:389K  willsemi
wnm2016.pdf

WNM2016-3
WNM2016-3

WNM2016WNM2016Http://www.sh-willsemi.com N-Channel, 20V, 3.2A, Power MOSFET VDS (V) Typical RDS(on) (m) D40 @ VGS=4.5V S20 47 @ VGS=2.5V 55 @ VGS=1.8V GSOT-23 DDescriptions3The WNM2016 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable

 7.2. Size:872K  willsemi
wnm2016a.pdf

WNM2016-3
WNM2016-3

WNM2016A WNM2016ASingle N-Channel, 20V, 4.7A, Power MOSFET Http://www.sh-willsemi.com V (V) Typical R (m) DS DS(on)33@ V =4.5V GS39@ V =3.1V GS20 44@ V =2.5V GS66@ V =1.8V GSSOT-23 Description D3The WNM2016A is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent R DS(ON)with low gate cha

 7.3. Size:99K  tysemi
wnm2016.pdf

WNM2016-3
WNM2016-3

Product specificationWNM2016N-Channel, 20V, 3.2A, Power MOSFET V(BR)DSS Rds(on) 40 @ 4.5V 20 47 @ 2.5V 55 @ 1.8V SOT-23 DDescriptions3The WNM2016 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC 21conversion and power swit

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