WNM2016-3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: WNM2016-3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 17 nS

Cossⓘ - Capacitancia de salida: 105 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.028 typ Ohm

Encapsulados: SOT23

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WNM2016-3 datasheet

 ..1. Size:1478K  cn vbsemi
 wnm2016-3.pdf pdf_icon

WNM2016-3

WNM2016-3 www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/DC

 7.1. Size:389K  willsemi
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WNM2016-3

WNM2016 WNM2016 Http //www.sh-willsemi.com N-Channel, 20V, 3.2A, Power MOSFET VDS (V) Typical RDS(on) (m ) D 40 @ VGS=4.5V S 20 47 @ VGS=2.5V 55 @ VGS=1.8V G SOT-23 D Descriptions 3 The WNM2016 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable

 7.2. Size:872K  willsemi
 wnm2016a.pdf pdf_icon

WNM2016-3

WNM2016A WNM2016A Single N-Channel, 20V, 4.7A, Power MOSFET Http //www.sh-willsemi.com V (V) Typical R (m ) DS DS(on) 33@ V =4.5V GS 39@ V =3.1V GS 20 44@ V =2.5V GS 66@ V =1.8V GS SOT-23 Description D 3 The WNM2016A is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent R DS(ON) with low gate cha

 7.3. Size:99K  tysemi
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WNM2016-3

Product specification WNM2016 N-Channel, 20V, 3.2A, Power MOSFET V(BR)DSS Rds(on) 40 @ 4.5V 20 47 @ 2.5V 55 @ 1.8V SOT-23 D Descriptions 3 The WNM2016 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC 2 1 conversion and power swit

MOSTRAR MÁS

Otros transistores... VBZMB8N60, VBZP50N50S, VBZQA120N03, VBZQA50N03, VBZQA50P03, VBZQA80N03, VBZQF50N03, VBZQF50P03, IRF9640, WNM2020-3, WPM2015-3-TR, WPM2341A-3-TR, XP132A1275SR, XP161A11A1PR, XP161A1355PR, XP202A0003PR, ZXMC6A09DN8T