ZXMP6A18DN8TA MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ZXMP6A18DN8TA

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 5.3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 210 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.054 typ Ohm

Encapsulados: SO8

 Búsqueda de reemplazo de ZXMP6A18DN8TA MOSFET

- Selecciónⓘ de transistores por parámetros

 

ZXMP6A18DN8TA datasheet

 ..1. Size:925K  cn vbsemi
 zxmp6a18dn8ta.pdf pdf_icon

ZXMP6A18DN8TA

ZXMP6A18DN8TA www.VBsemi.tw Dual P-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.059 at VGS = - 10 V - 5.3 100 % UIS Tested RoHS - 60 17 nC COMPLIANT 0.069 at VGS = - 4.5 V - 5.0 APPLICATIONS Load Switches S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 T

 3.1. Size:183K  diodes
 zxmp6a18dn8.pdf pdf_icon

ZXMP6A18DN8TA

ZXMP6A18DN8 DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -60V; RDS(ON) = 0.055 ; ID= -4.8A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-resistan

 6.1. Size:583K  diodes
 zxmp6a18k.pdf pdf_icon

ZXMP6A18DN8TA

ZXMP6A18K 60V P-channel enhancement mode MOSFET Summary V(BR)DSS = -60V RDS(on) = 0.055 ID = -10.4A Description D This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, G power management applications. Features S Low on-

 6.2. Size:580K  zetex
 zxmp6a18ktc.pdf pdf_icon

ZXMP6A18DN8TA

ZXMP6A18K 60V P-channel enhancement mode MOSFET Summary V(BR)DSS = -60V RDS(on) = 0.055 ID = -10.4A Description D This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, G power management applications. Features S Low on-

MOSTRAR MÁS

Otros transistores... WPM2341A-3-TR, XP132A1275SR, XP161A11A1PR, XP161A1355PR, XP202A0003PR, ZXMC6A09DN8T, ZXMN4A06GT, ZXMP10A17GTA, AO4468, NCE0102, NCE0103M, NCE0103Y, NCE0106R, NCE0106Z, NCE0110AK, NCE0110AS, NCE0110K