FDC6333C Todos los transistores

October 2001 FDC6333C 30V N & P-Channel PowerTrench MOSFETs General Description Features These N & P-Channel MOSFETs are produced using Q1 2.5 A, 30V. RDS(ON) = 95 m @ VGS = 10 V Fairchild Semiconductor s advanced PowerTrench RDS(ON) = 150 m @ VGS = 4.5 V process that has been especially tailored to minimize on-state resistance and yet maintain superior Q2 2

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

March 1998 FDC633N N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel enhancement mode power field effect 5.2 A, 30 V. RDS(ON) = 0.042 @ VGS = 4.5 V transistors is produced using Fairchild's proprietary, high cell RDS(ON) = 0.054 @ VGS = 2.5 V. density, DMOS technology. This very high density process is tailored to minimize on-stat

November 1999 FDC637AN Single N-Channel, 2.5V Specified PowerTrenchTM MOSFET General Description Features This N-Channel 2.5V specified MOSFET is produced 6.2 A, 20 V. RDS(on) = 0.024 @ VGS = 4.5 V using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored RDS(on) = 0.032 @ VGS = 2.5 V to minimize on-state resistance and yet maintain lo

September 2001 FDC638P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P 2.5V specified MOSFET is produced -Channel 4.5 A, 20 V. R = 48 m @ V = 4.5 V DS(ON) GS using Fairchild Semiconductor s advanced R = 65 m @ V = 2.5 V DS(ON) GS PowerTrench process that has been especially tailored to minimize the on-state resistanc

March 1999 FDC6323L Integrated Load Switch General Description Features VDROP=0.2V @ VIN=5V, IL=1A, VON/OFF= 1.5V to 8V These Integrated Load Switches are produced using VDROP=0.3V @ VIN=3.3V, IL=1A, VON/OFF= 1.5V to 8V. Fairchild's proprietary, high cell density, DMOS technology. This very high density process is High density cell design for extremely low on-resistance. especially

March 1999 FDC6305N Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features 2.7 A, 20 V. RDS(ON) = 0.08 @ VGS = 4.5 V These N-Channel low threshold 2.5V specified MOSFETs are produced using Fairchild Semiconductor's RDS(ON) = 0.12 @ VGS = 2.5 V advanced PowerTrench process that has been especially tailored to minimize on-state resistance and Low

February 1999 FDC6306P Dual P-Channel 2.5V Specified PowerTrench MOSFET Features General Description These P-Channel 2.5V specified MOSFETs are produced -1.9 A, -20 V. RDS(on) = 0.170 @ VGS = -4.5 V using Fairchild Semiconductor's advanced PowerTrench RDS(on) = 0.250 @ VGS = -2.5 V process that has been especially tailored to minimize on-state resistance and yet maintain

April 2002 FDC6392S 20V Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features MOSFET The FDC6392S combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a 2.2 A, 20V. RDS(ON) = 150 m @ VGS = 4.5V very low forward voltage drop Schottky barrier rectifier RDS(ON) = 200 m @ VGS

July 1997 FDC6304P Digital FET, Dual P-Channel General Description Features -25 V, -0.46 A continuous, -1.0 A Peak. These P-Channel enhancement mode field effect transistor are produced using Fairchild's proprietary, high cell density, DMOS RDS(ON) = 1.5 @ VGS= -2.7 V technology. This very high density process is tailored to minimize RDS(ON) = 1.1 @ VGS = -4.5 V. on-state

December 2006 FDC638APZ P-Channel 2.5V PowerTrench Specified MOSFET 20V, 4.5A, 43m Features General Description Max rDS(on) = 43m at VGS = 4.5V, ID = 4.5A This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process Max rDS(on) = 68m at VGS = 2.5V, ID = 3.8A that has been especially tailored to minim

October 1997 FDC6320C Dual N & P Channel , Digital FET General Description Features These dual N & P Channel logic level enhancement mode field N-Ch 25 V, 0.22 A, RDS(ON) = 5 @ VGS= 2.7 V. effec transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density P-Ch 25 V, -0.12 A, RDS(ON) = 13 @ VGS= -2.7 V. process is especial

April 2001 FDC6310P Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features These P-Channel 2.5V specified MOSFETs are 2.2 A, 20 V. R = 125 m @ V = 4.5 V DS(ON) GS produced using Fairchild Semiconductor's advanced R = 190 m @ V = 2.5 V DS(ON) GS PowerTrench process that has been especially tailored to minimize on-state resistance

April 1999 FDC6321C Dual N & P Channel , Digital FET General Description Features These dual N & P Channel logic level enhancement mode N-Ch 25 V, 0.68 A, RDS(ON) = 0.45 @ VGS= 4.5 V field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very P-Ch -25 V, -0.46 A, RDS(ON) = 1.1 @ VGS= -4.5 V. high density process is especi

October 1997 FDC6302P Digital FET, Dual P-Channel General Description Features These Dual P-Channel logic level enhancement mode field effect -25 V, -0.12 A continuous, -0.5 A Peak. transistors are produced using Fairchild's proprietary, high cell RDS(ON) = 13 @ VGS= -2.7 V density, DMOS technology. This very high density process is RDS(ON) = 10 @ VGS = -4.5 V. especially

September 2001 FDC634P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses 3.5 A, 20 V. R = 80 m @ V = 4.5 V DS(ON) GS Fairchild s low voltage PowerTrench process. It has R = 110 m @ V = 2.5 V DS(ON) GS been optimized for battery power management applications. Low gate charge (7.2 n

November 1998 FDC6329L Integrated Load Switch General Description Features This device is particularly suited for compact power VDROP=0.2V @ VIN=5V, IL=2.8A. R(ON) = 0.07 VDROP=0.2V management in portable electronic equipment where @ VIN=2.5V, IL=1.9A. R(ON) = 0.105 . 2.5V to 8V input and 2.5A output current capability are needed. This load switch integrates a small N-Channel

September 2001 FDC6301N Dual N-Channel , Digital FET General Description Features 25 V, 0.22 A continuous, 0.5 A Peak. These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild 's proprietary, RDS(ON) = 5 @ VGS= 2.7 V high cell density, DMOS technology. This very high density RDS(ON) = 4 @ VGS= 4.5 V. process is especially tailo

July 1999 FDC6308P Dual P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged -1.7 A, -18 V. RDS(ON) = 0.18 @ VGS = -4.5 V gate version of Fairchild Semiconductor's advanced RDS(ON) = 0.30 @ VGS = -2.5 V PowerTrench process. It has been optimized for power management applications with a wide range of gate

July 2000 FDC6327C Dual N & P-Channel 2.5V Specified PowerTrenchTM MOSFET Features General Description These N & P-Channel 2.5V specified MOSFETs are N-Channel 2.7A, 20V. RDS(on) = 0.08 @ VGS = 4.5V produced using Fairchild Semiconductor's advanced RDS(on) = 0.12 @ VGS = 2.5V PowerTrench process that has been especially tailored to minimize on-state resistance and yet mainta

December 2001 FDC6318P Dual P-Channel 1.8V PowerTrench Specified MOSFET General Description Features These P-Channel 1.8V specified MOSFETs are 2.5 A, 12 V. RDS(ON) = 90 m @ VGS = 4.5 V produced using Fairchild Semiconductor's advanced RDS(ON) = 125 m @ VGS = 2.5 V PowerTrench process that has been especially tailored RDS(ON) = 200 m

August 1997 FDC6303N Digital FET, Dual N-Channel General Description Features 25 V, 0.68 A continuous, 2 A Peak. These dual N-Channel logic level enhancement mode field RDS(ON) = 0.6 @ VGS = 2.7 V effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density RDS(ON) = 0.45 @ VGS= 4.5 V. process is especially tailored

May 1998 FDC636P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power -2.8 A, -20 V. RDS(ON) = 0.130 @ VGS = -4.5 V field effect transistors are produced using Fairchild's RDS(ON) = 0.180 @ VGS = -2.5 V. proprietary, high cell density, DMOS technology. This very high density process is

March 1999 FDC6324L Integrated Load Switch General Description Features These Integrated Load Switches are produced using Fairchild's VDROP=0.2V @ VIN=12V, IL=1A, VON/OFF=1.5 to 8V proprietary, high cell density, DMOS technology. This very high VDROP=0.3V @ VIN=5V, IL=1A, VON/OFF=1.5 to 8V. density process is especially tailored to minimize on-state High density cell design for extr

September 2007 FDC637BNZ tm N-Channel 2.5V Specified PowerTrench MOSFET 20V, 6.2A, 24m Features General Description Max rDS(on) = 24m at VGS = 4.5V, ID = 6.2A This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process Max rDS(on) = 32m at VGS = 2.5V, ID = 5.2A that has been especially tailored to minimize the on-sta

FDC637AN Single N-Channel, 2.5V Specified PowerTrenchTM MOSFET General Description Features This N-Channel 2.5V specified MOSFET is produced 6.2 A, 20 V. RDS(on) = 0.024 @ VGS = 4.5 V using ON Semiconductor's advanced PowerTrench process that has been especially tailored RDS(on) = 0.032 @ VGS = 2.5 V to minimize on-state resistance and yet maintain low gate charge for

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FDC6321C Dual N & P Channel , Digital FET Features N-Ch 25 V, 0.68 A, RDS(ON) = 0.45 @ VGS= 4.5 V General Description P-Ch -25 V, -0.46 A, RDS(ON) = 1.1 @ VGS= -4.5 V. These dual N & P Channel logic level enhancement mode Very low level gate drive requirements allowing direct field effect transistors are produced using ON operation in 3 V circuits. VGS(th)

FDC6301N Dual N-Channel , Digital FET Features General Description 25 V, 0.22 A continuous, 0.5 A Peak. These dual N-Channel logic level enhancement mode field RDS(ON) = 5 @ VGS= 2.7 V effect transistors are produced using ON Semiconductor 's RDS(ON) = 4 @ VGS= 4.5 V. proprietary, high cell density, DMOS technology. This very high density process is especially tailored to

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and oth

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

September 2007 FDC637BNZ tm N-Channel 2.5V Specified PowerTrench MOSFET 20V, 6.2A, 24m Features General Description Max rDS(on) = 24m at VGS = 4.5V, ID = 6.2A This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process Max rDS(on) = 32m at VGS = 2.5V, ID = 5.2A that has been especially tailored to minimize the on-sta

FDC637AN www.VBsemi.tw N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET 0.030 at VGS = 10 V 6 Low On-Resistance 30 4.2 nC 0.040 at VGS = 4.5 V 6 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC TSOP-6 APPLICATIONS DC/DC

FDC638P www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.049 at VGS = - 10 V - 4.8 TrenchFET Power MOSFET - 30 5.1 nC 0.054 at VGS = - 4.5 V - 4.1 APPLICATIONS Load Switch TSOP-6 (4) S Top V iew 1 6 (3) G 3 mm 5 2 3 4 (1, 2, 5, 6) D 2.85 mm P-Cha

FDC6305N www.VBsemi.tw Dual N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.022 at VGS = 4.5 V TrenchFET Power MOSFET 6.0 20 1.8 nC 100 % Rg Tested 0.028 at VGS = 2.5 V 5.0 Compliant to RoHS Directive 2002/95/EC TSOP-6 D1 D 2 D Top View G1 D1 1 6 G 1

FDC6312P www.VBsemi.tw Dual P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.075 at VGS = - 4.5V - 4.0 TrenchFET Power MOSFET - 20 2.7 nC 0.100 at VGS = - 2.5 V - 3.2 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch for Portable Ap

FDC6321C www.VBsemi.tw N- and P-Channel 2 V (D-S) MOSFET 0 FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.024 at VGS = 10 V 5.5 TrenchFET Power MOSFET N-Channel 20 0.036 at VGS = 4.5 V 4.2 100 % Rg Tested 0.069 at VGS = - 10 V - 3.4 Compliant to RoHS Directive 2002/95/EC P-Channel - 20 0.083 at V

FDC6327C www.VBsemi.tw N- and P-Channel 2 V (D-S) MOSFET 0 FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.024 at VGS = 10 V 5.5 TrenchFET Power MOSFET N-Channel 20 0.036 at VGS = 4.5 V 4.2 100 % Rg Tested 0.069 at VGS = - 10 V - 3.4 Compliant to RoHS Directive 2002/95/EC P-Channel - 20 0.083 at V

FDC637BNZ www.VBsemi.tw N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET 0.030 at VGS = 10 V 6 Low On-Resistance 30 4.2 nC 0.040 at VGS = 4.5 V 6 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC TSOP-6 APPLICATIONS DC/DC