NCE12P09S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NCE12P09S
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 12 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   Qgⓘ - Carga de la puerta: 35 nC
   trⓘ - Tiempo de subida: 35 nS
   Cossⓘ - Capacitancia de salida: 680 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm
   Paquete / Cubierta: SOP8

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NCE12P09S Datasheet (PDF)

..1. Size:285K ncepower
nce12p09s.pdf

http://www.ncepower.com NCE12P09SNCE P-Channel Enhancement Mode Power MOSFET Description The NCE12P09S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications. General Features VDS = -12V,ID = -9A Schematic diagram

9.1. Size:465K ncepower
nce1205.pdf

Pb Free Producthttp://www.ncepower.com NCE1205N and P-Channel Enhancement Mode Power MOSFET Description The NCE1205 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-Channel N-channel P-channelVDS =1

9.2. Size:722K ncepower
nce1230sp.pdf

http://www.ncepower.comNCE1230SPNCE Common-Drain Dual N-Channel Enhancement Mode Field Effect TransistorDescriptionGeneral FeaturesThe NCE1230SP uses advanced trench technology to provide V =12V,I =30ASSS Sexcellent R , low gate charge and operation with gateSS(ON)R on =1.0m (typical) @ V =4.5VSS( ) GSvoltages as low as 2.5V while retaining a 8V V rating. It isGS(

9.3. Size:1355K ncepower
nce120ed120vtp4.pdf

NCE120ED120VTP41200V, 120A, Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 1200V Trench Field Stop Gen.7 IGBT offerssuperior conduction and switching performances, and easy parallel operation;Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage: V = 1.60

9.4. Size:488K ncepower
nce1227sp.pdf

http://www.ncepower.com NCE1227SPNCE Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor Description General Features The NCE1227SP uses advanced trench technology to provide VSSS =12V,IS =27A excellent RSS(ON), low gate charge and operation with gate RSS(on)=2.1m (typical) @ VGS=4.5V voltages as low as 2.5V while retaining a 8V VGS(MAX) rating. It is

9.5. Size:1440K ncepower
nce120ed120vtp.pdf

NCE120ED120VTP1200V, 120A, Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 1200V Trench Field Stop Gen.7 IGBT offerssuperior conduction and switching performances, and easy parallel operation;Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage: V = 1.60V

9.6. Size:248K ncepower
nce1216.pdf

Pb Free Producthttp://www.ncepower.com NCE1216NCE P-Channel Enhancement Mode Power MOSFET Description DThe NCE1216 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages .This device is suitable for use as a load switching application and a wide variety of other applications. SGeneral Features Schematic diagram

9.7. Size:468K ncepower
nce1220sp.pdf

http://www.ncepower.com NCE1220SPNCE Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor Description General Features The NCE1220SP uses advanced trench technology to provide VSSS =12V,IS =20A excellent RSS(ON), low gate charge and operation with gate RSS(on)=3.6m (typical) @ VGS=4.5V voltages as low as 2.5V while retaining a 10V VGS(MAX) rating. It is

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