NCE1550 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE1550
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 220 W
Voltaje máximo drenador - fuente |Vds|: 150 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 50 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4.5 V
Carga de la puerta (Qg): 163 nC
Tiempo de subida (tr): 24 nS
Conductancia de drenaje-sustrato (Cd): 670 pF
Resistencia entre drenaje y fuente RDS(on): 0.023 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de MOSFET NCE1550
NCE1550 Datasheet (PDF)
nce1550.pdf
Pb Free Producthttp://www.ncepower.com NCE1550NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1550 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =50A RDS(ON)
nce1550f.pdf
Pb Free Producthttp://www.ncepower.com NCE1550FNCE N-Channel Enhancement Mode Power MOSFET Description The NCE1550F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =50A RDS(ON)
nce15td60bd nce15td60b nce15td60bf.pdf
PbFreeProduct NCE15TD60BD,NCE15TD60B,NCE15TD60BF 600V, 15A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat
nce1579c.pdf
Pb Free Producthttp://www.ncepower.com NCE1579CNCE N-Channel Enhancement Mode Power MOSFET Description The NCE1579C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =79A RDS(ON)
nce1540ka.pdf
http://www.ncepower.com NCE1540KANCE N-Channel Enhancement Mode Power MOSFET Description The NCE1540KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =40A RDS(ON)
nce1503s.pdf
http://www.ncepower.com NCE1503SNCE N-Channel Enhancement Mode Power MOSFET Description The NCE1503S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDS = 150V,ID = 3A RDS(ON)
nce15p25j.pdf
http://www.ncepower.com NCE15P25J NCE P-Channel Enhancement Mode Power MOSFET Description The NCE15P25J uses advanced trench technology and design to provide excellent R with low gate charge. It can be DS(ON) used in a wide variety of applications. General Features V =-150V,I =-25A Schematic diagram DS DRDS(ON)
nce15h10.pdf
http://www.ncepower.comNCE15H10NCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE15H10 uses advanced trench technology and designto provide excellent R with low gate charge. This device isDS(ON)suitable for use in PWM, load switching and general purposeapplications.General FeaturesSchematic diagram V =150V,I =100ADS DR
nce15h10a.pdf
Pb Free Producthttp://www.ncepower.comNCE15H10ANCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE15H10A uses advanced trench technology anddesign to provide excellent R with low gate charge. ThisDS(ON)device is suitable for use in PWM, load switching and generalpurpose applications.General Features V =150V,I =100A Schematic diagramDS DR
nce1520.pdf
Pb Free Producthttp://www.ncepower.com NCE1520NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1520 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID =20A RDS(ON)
nce1520k.pdf
Pb Free Producthttp://www.ncepower.com NCE1520KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE1520K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID =20A RDS(ON)
nce15h15t.pdf
Pb Free Producthttp://www.ncepower.com NCE15H15TNCE N-Channel Enhancement Mode Power MOSFET Description The NCE15H15T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =150V,ID =150A Schematic diagram RDS(ON)
nce1540af.pdf
http://www.ncepower.comNCE1540AFNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE1540AF uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =150V,I =20ADS DR
nce1505s.pdf
Pb Free Producthttp://www.ncepower.com NCE1505SNCE N-Channel Enhancement Mode Power MOSFET Description The NCE1505S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =5.2A Schematic diagram RDS(ON)
nce1540ad.pdf
Pb Free Producthttp://www.ncepower.com NCE1540ADNCE N-Channel Enhancement Mode Power MOSFET Description The NCE1540AD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =40A RDS(ON)
nce1570.pdf
Pb Free Producthttp://www.ncepower.com NCE1570NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1570 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =70A Schematic diagram RDS(ON)
nce1507ak.pdf
http://www.ncepower.com NCE1507AKNCE N-Channel Enhancement Mode Power MOSFET Description The NCE1507AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID = 7A Schematic diagram RDS(ON)
nce15td60bd nce15td60b nce15td60bf.pdf
PbFreeProduct NCE15TD60BD,NCE15TD60B,NCE15TD60BF 600V, 15A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat
nce15p30.pdf
http://www.ncepower.comNCE15P30NCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE15P30 uses advanced trench technology and designto provide excellent R with low gate charge. It can be usedDS(ON)in a wide variety of applications.General Features V =-150V,I =-30A Schematic diagramDS DR
nce1579c.pdf
http://www.ncepower.com NCE1579CNCE N-Channel Enhancement Mode Power MOSFET Description The NCE1579C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =79A RDS(ON)
nce1520ka.pdf
Pb Free Producthttp://www.ncepower.com NCE1520KANCE N-Channel Enhancement Mode Power MOSFET Description The NCE1520KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID =20A Schematic diagram RDS(ON)
nce15p25i.pdf
http://www.ncepower.com NCE15P25I NCE P-Channel Enhancement Mode Power MOSFET Description The NCE15P25JI uses advanced trench technology and design to provide excellent R with low gate charge. It can DS(ON) be used in a wide variety of applications. General Features V =-150V,I =-25A DS DSchematic diagram RDS(ON)
nce15td60b.pdf
PbFreeProduct NCE15TD60B 600V, 15A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switch
nce1502r.pdf
Pb Free Producthttp://www.ncepower.com NCE1502RNCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE1502R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. SGeneral Features VDS = 150V,ID = 2A Schematic diagram RDS(ON)
nce15p25jk.pdf
NCE15P25JK http://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE15P25JK uses advanced trench technology and design to provide excellent R with low gate charge. It can DS(ON) be used in a wide variety of applications. General Features V =-150V,I =-25A Schematic diagram DS DRDS(ON)
nce1504r.pdf
http://www.ncepower.com NCE1504RNCE N-Channel Enhancement Mode Power MOSFET Description The NCE1504R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID = 4A Schematic diagram RDS(ON)
nce15p25ji.pdf
http://www.ncepower.com NCE15P25JI NCE P-Channel Enhancement Mode Power MOSFET Description The NCE15P25JI uses advanced trench technology and design to provide excellent R with low gate charge. It can DS(ON) be used in a wide variety of applications. General Features V =-150V,I =-25A DS DSchematic diagram RDS(ON)
nce1512ia.pdf
Pb Free Producthttp://www.ncepower.com NCE1512IANCE N-Channel Enhancement Mode Power MOSFET DDescription The NCE1512IA uses advanced trench technology and Gdesign to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. SGeneral Features Schematic diagram VDS = 150V,ID =12A RDS(ON)
nce15p25.pdf
http://www.ncepower.com NCE15P25 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE15P25 uses advanced trench technology and design to provide excellent R with low gate charge. It can be DS(ON) used in a wide variety of applications. General Features V =-150V,I =-25A Schematic diagram DS DRDS(ON)
nce15td120bt.pdf
PbFreeProduct NCE15TD120BT 1200V, 15A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) Positive temp
nce15p30k.pdf
http://www.ncepower.comNCE15P30KNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE15P30K uses advanced trench technology anddesign to provide excellent R with low gate charge. It canDS(ON)be used in a wide variety of applications.General Features V =-150V,I =-30A Schematic diagramDS DR
nce1540k.pdf
Pb Free Producthttp://www.ncepower.com NCE1540KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE1540K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =40A RDS(ON)
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