NCE2312A Todos los transistores

 

NCE2312A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE2312A
   Código: 2312A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 1.25 W
   Voltaje máximo drenador - fuente |Vds|: 20 V
   Voltaje máximo fuente - puerta |Vgs|: 10 V
   Corriente continua de drenaje |Id|: 5 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 1 V
   Carga de la puerta (Qg): 11 nC
   Tiempo de subida (tr): 30 nS
   Conductancia de drenaje-sustrato (Cd): 140 pF
   Resistencia entre drenaje y fuente RDS(on): 0.028 Ohm
   Paquete / Cubierta: SOT23

 Búsqueda de reemplazo de MOSFET NCE2312A

 

NCE2312A Datasheet (PDF)

 ..1. Size:243K  ncepower
nce2312a.pdf

NCE2312A
NCE2312A

Pb Free Producthttp://www.ncepower.com NCE2312ANCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE2312A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SSchematic diagram General Features

 7.1. Size:318K  ncepower
nce2312x.pdf

NCE2312A
NCE2312A

http://www.ncepower.com NCE2312XNCE N-Channel Enhancement Mode Power MOSFET DDescription The NCE2312X uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a uni-directional or bi-directional load switch. SGeneral Features Schematic diagram VDS = 20V,ID = 6A

 7.2. Size:287K  ncepower
nce2312.pdf

NCE2312A
NCE2312A

Pb Free Producthttp://www.ncepower.com NCE2312NCE N-Channel Enhancement Mode Power MOSFET DDescription The NCE2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. SSchematic diagram General Features

 9.1. Size:262K  ncepower
nce2301a.pdf

NCE2312A
NCE2312A

Pb Free Producthttp://www.ncepower.com NCE2301ANCE P-Channel Enhancement Mode Power MOSFET Description The NCE2301A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features VDS = -15V,ID = -3.0A Schematic diagram

 9.2. Size:257K  ncepower
nce2301c.pdf

NCE2312A
NCE2312A

Pb Free Producthttp://www.ncepower.com NCE2301CNCE P-Channel Enhancement Mode Power MOSFET Description DThe NCE2301C uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. SGeneral Features Schematic diagram VDS = -15V,

 9.3. Size:330K  ncepower
nce2301e.pdf

NCE2312A
NCE2312A

Pb Free Producthttp://www.ncepower.com NCE2301ENCE P-Channel Enhancement Mode Power MOSFET Description The NCE2301E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features

 9.4. Size:335K  ncepower
nce2321a.pdf

NCE2312A
NCE2312A

Pb Free Producthttp://www.ncepower.com NCE2321ANCE P-Channel Enhancement Mode Power MOSFET Description The NCE2321A uses advanced trench technology to provide Dexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Gload switch or in PWM applications. SGeneral Features VDS = -20V,ID = -4.5A Schematic

 9.5. Size:350K  ncepower
nce2309.pdf

NCE2312A
NCE2312A

http://www.ncepower.com NCE2309NCE P-Channel Enhancement Mode Power MOSFET Description The NCE2309 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features VDS =-60V,ID =-1.6A Schematic diagram RDS(ON)

 9.6. Size:344K  ncepower
nce2304.pdf

NCE2312A
NCE2312A

Pb Free Producthttp://www.ncepower.com NCE2304NCE N-Channel Enhancement Mode Power MOSFET DDescription The NCE2304 uses advanced trench technology to provide Gexcellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. SGeneral Features Schematic diagram VDS = 30V,ID = 3.6A RDS(ON)

 9.7. Size:234K  ncepower
nce2302.pdf

NCE2312A
NCE2312A

Pb Free Producthttp://www.ncepower.com NCE2302NCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SSchematic diagram General Features

 9.8. Size:329K  ncepower
nce2303.pdf

NCE2312A
NCE2312A

Pb Free Producthttp://www.ncepower.com NCE2303NCE P-Channel Enhancement Mode Power MOSFET Description DThe NCE2303 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load Gswitch or in PWM applications. SGeneral Features VDS = -30V,ID = -2.0A Schematic diagram RDS(ON)

 9.9. Size:637K  ncepower
nce2308x.pdf

NCE2312A
NCE2312A

http://www.ncepower.comNCE2308XNCE N-Channel Enhancement Mode Power MOSFETDDescriptionThe NCE2308X uses advanced trench technology to provideGexcellent R , low gate charge. This device is suitable forDS(ON)use as a Battery protection or in other switching application.SSchematic DiagramGeneral Features V =60V,I =3ADS DR

 9.10. Size:242K  ncepower
nce2302c.pdf

NCE2312A
NCE2312A

Pb Free Producthttp://www.ncepower.com NCE2302CNCE N-Channel Enhancement Mode Power MOSFET Description The NCE2302C uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features Schematic diagram VD

 9.11. Size:308K  ncepower
nce2305a.pdf

NCE2312A
NCE2312A

Pb Free Producthttp://www.ncepower.com NCE2305ANCE P-Channel Enhancement Mode Power MOSFET DDescription The NCE2305A uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram General Features VDS = -12V,

 9.12. Size:241K  ncepower
nce2301.pdf

NCE2312A
NCE2312A

Pb Free Producthttp://www.ncepower.com NCE2301NCE P-Channel Enhancement Mode Power MOSFET Description The NCE2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features Schematic diagram VDS = -20V,ID = -3A

 9.13. Size:251K  ncepower
nce2333y.pdf

NCE2312A
NCE2312A

Pb Free Producthttp://www.ncepower.com NCE2333YNCE P-Channel Enhancement Mode Power MOSFET Description DThe NCE2333Y uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SGeneral Features Schematic diagram VDS = -12V,

 9.14. Size:261K  ncepower
nce2301f.pdf

NCE2312A
NCE2312A

Pb Free Producthttp://www.ncepower.com NCE2301FNCE P-Channel Enhancement Mode Power MOSFET Description DThe NCE2301F uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. SGeneral Features Schematic diagram VDS = -20V,

 9.15. Size:249K  ncepower
nce2301d.pdf

NCE2312A
NCE2312A

Pb Free Producthttp://www.ncepower.com NCE2301DNCE P-Channel Enhancement Mode Power MOSFET Description DThe NCE2301D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. SGeneral Features Schematic diagram VDS = -20V,

 9.16. Size:335K  ncepower
nce2305.pdf

NCE2312A
NCE2312A

Pb Free Producthttp://www.ncepower.com NCE2305NCE P-Channel Enhancement Mode Power MOSFET Description DThe NCE2305 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram General Features VDS = -20V,ID

 9.17. Size:245K  ncepower
nce2302b.pdf

NCE2312A
NCE2312A

Pb Free Producthttp://www.ncepower.com NCE2302BNCE N-Channel Enhancement Mode Power MOSFET Description The NCE2302B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram General Features VD

 9.18. Size:264K  ncepower
nce2323.pdf

NCE2312A
NCE2312A

http://www.ncepower.com NCE2323NCE P-Channel Enhancement Mode Power MOSFET Description The NCE2323 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Schematic diagram General Features VDS = -20V,ID = -4.1A RDS(ON)

 9.19. Size:249K  ncepower
nce2321.pdf

NCE2312A
NCE2312A

Pb Free Producthttp://www.ncepower.com NCE2321NCE P-Channel Enhancement Mode Power MOSFET Description DThe NCE2321 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SGeneral Features Schematic diagram VDS = -20V,ID

 9.20. Size:250K  ncepower
nce2301b.pdf

NCE2312A
NCE2312A

Pb Free Producthttp://www.ncepower.com NCE2301BNCE P-Channel Enhancement Mode Power MOSFET Description DThe NCE2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. SGeneral Features Schematic diagram VDS = -20V,

 9.21. Size:1748K  cn vbsemi
nce2305a.pdf

NCE2312A
NCE2312A

NCE2305Awww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-23

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