NCE3025Q Todos los transistores

 

NCE3025Q MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE3025Q
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 25 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 250 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm
   Paquete / Cubierta: DFN3.3X3.3-8L
 

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NCE3025Q Datasheet (PDF)

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NCE3025Q

NCE3025Qhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3025Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =25A RDS(ON)

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nce3025g.pdf pdf_icon

NCE3025Q

http://www.ncepower.com NCE3025GNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3025G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =25A RDS(ON)

 8.1. Size:355K  ncepower
nce3020q.pdf pdf_icon

NCE3025Q

http://www.ncepower.com NCE3020QNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3020Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =20A RDS(ON)

 9.1. Size:331K  ncepower
nce30h10g.pdf pdf_icon

NCE3025Q

http://www.ncepower.com NCE30H10GNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3065G uses advanced trench technology and design General Features to provide excellent RDS(ON) with low gate charge. It can be VDS =30V,ID =100A used in a wide variety of applications. RDS(ON)=1.9m (typical) @ VGS=10V RDS(ON)=2.9m (typical) @ VGS=4.5V Application DC/

Otros transistores... NCE2309 , NCE2312 , NCE2312A , NCE2333Y , NCE3008M , NCE3011E , NCE3018AS , NCE3020Q , IRFZ46N , NCE3035Q , NCE3050 , NCE3050K , NCE3065K , NCE3080IA , NCE3080K , NCE3090K , NCE3095G .

History: NCE2309 | OSG60R074HZF | NCE3080IA | GSM4637 | IRF9241 | CJ2310 | IPI110N20N3G

 

 
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