STU15L01 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: STU15L01
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 14.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 10.2 nS
   Cossⓘ - Capacitancia de salida: 47 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.145 Ohm
   Paquete / Cubierta: TO252 DPAK

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STU15L01 Datasheet (PDF)

..1. Size:149K samhop
stu15l01 std15l01.pdf

GreenProductSTU/D15L01aS mHop Microelectronics C orp.Ver 1.2N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.145 @ VGS=10VTO-252 and TO-251 Package.15A100V195 @ VGS=4.5V Halogen free.GSSTU SERIESSTD SERIES( )TO - 252AA D- PA

..2. Size:845K cn vbsemi
stu15l01.pdf

STU15L01www.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS

9.1. Size:945K st
std150n3llh6 stp150n3llh6 stu150n3llh6.pdf

STD150N3LLH6STP150N3LLH6, STU150N3LLH6N-channel 30 V, 0.0024 , 80 A, DPAK, IPAK, TO-220STripFET VI DeepGATE Power MOSFETFeaturesType VDSS RDS(on) max IDSTD150N3LLH6 30 V 0.0028 80 A 332STP150N3LLH6 30 V 0.0033 80 A11STu150N3LLH6 30 V 0.0033 80 AIPAKDPAK RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on)32 Hi

9.2. Size:148K samhop
stu15n20 std15n20.pdf

STU15N20GreenProductSTD15N20aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) TypRugged and reliable.200V 15A 190 @ VGS=10VTO-252 and TO-251 Package.GSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO - 251 I - PAKAB

9.3. Size:98K samhop
stu1530pl std1530pl.pdf

S TU/D1530P LS amHop Microelectronics C orp.P reliminary Mar.28 2004P-Channel E nhancement Mode MOS FE TPR ODUC T S UMMAR Y FEATUR ESR DS (ON) ( m ) MaxVDS S ID S uper high dense cell design for low R DS (ON).R ugged and reliable.45 @ VGS =-10V-30V -20ATO-252 and TO-251 Package.60 @ VGS = -4.5VDDGGSSDU SERIES SDD SERIESTO-252AA(D-PAK) TO-251(l-PAK)SABS

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