NCE4606A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE4606A

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 6.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 2.5 nS

Cossⓘ - Capacitancia de salida: 67.1 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.024 Ohm

Encapsulados: SOP8

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NCE4606A datasheet

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 nce4606a.pdf pdf_icon

NCE4606A

http //www.ncepower.com NCE4606A N and P-Channel Enhancement Mode Power MOSFET Description The NCE4606A uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel N-Channel VDS = 30V,ID =6.5A Sc

 7.1. Size:397K  ncepower
 nce4606b.pdf pdf_icon

NCE4606A

http //www.ncepower.com NCE4606B N and P-Channel Enhancement Mode Power MOSFET Description The NCE4606B uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. N-channel P-channel General Features N-Channel Schematic diagram VDS

 7.2. Size:1122K  ncepower
 nce4606c.pdf pdf_icon

NCE4606A

http //www.ncepower.com NCE4606C N and P-Channel Enhancement Mode Power MOSFET Description The NCE4606C uses advanced trench technology to provide excellent R and low gate charge . The complementary DS(ON) MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. N-channel P-channel General Features N-Channel Schematic diagram V = 30V,I

 7.3. Size:434K  ncepower
 nce4606.pdf pdf_icon

NCE4606A

Pb Free Product http //www.ncepower.com NCE4606 N and P-Channel Enhancement Mode Power MOSFET Description The NCE4606 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel N-Channel VDS =

MOSTRAR MÁS

Otros transistores... NCE40P05S, NCE40P07S, NCE40P13S, NCE40P15K, NCE40P40K, NCE40P40L, NCE40P70K, NCE4435, IRF9540N, NCE4614, NCE4801, NCE4963, NCE55H12, NCE55P15I, NCE55P15K, NCE55P30, NCE55P30K