NCE55P30 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE55P30

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 90 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 30 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15 nS

Cossⓘ - Capacitancia de salida: 240 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm

Encapsulados: TO220

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NCE55P30 datasheet

 ..1. Size:325K  ncepower
 nce55p30.pdf pdf_icon

NCE55P30

Pb Free Product http //www.ncepower.com NCE55P30 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE55P30 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-55V,ID =-30A RDS(ON)

 0.1. Size:365K  ncepower
 nce55p30k.pdf pdf_icon

NCE55P30

Pb Free Product http //www.ncepower.com NCE55P30K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE55P30K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-55V,ID =-30A RDS(ON)

 8.1. Size:392K  ncepower
 nce55p04s.pdf pdf_icon

NCE55P30

Pb Free Product http //www.ncepower.com NCE55P04S NCE P-Channel Enhancement Mode Power MOSFET Description D1 D2 The NCE55P04S uses advanced trench technology and G1 G2 design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. S1 S2 Schematic diagram General Features VDS =-55V,ID =-4A RDS(ON)

 8.2. Size:311K  ncepower
 nce55p15.pdf pdf_icon

NCE55P30

Pb Free Product http //www.ncepower.com NCE55P15 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE55P15 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-55V,ID =-15A RDS(ON)

MOSTRAR MÁS

Otros transistores... NCE4435, NCE4606A, NCE4614, NCE4801, NCE4963, NCE55H12, NCE55P15I, NCE55P15K, SPP20N60C3, NCE55P30K, NCE6003, NCE6003M, NCE6003Y, NCE6005AR, NCE6008AS, NCE6009AS, NCE6012AS