NCE6009AS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE6009AS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 2.6 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 9 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.2 V
Carga de la puerta (Qg): 58 nC
Tiempo de subida (tr): 6 nS
Conductancia de drenaje-sustrato (Cd): 350 pF
Resistencia entre drenaje y fuente RDS(on): 0.015 Ohm
Paquete / Cubierta: SOP8
Búsqueda de reemplazo de MOSFET NCE6009AS
NCE6009AS Datasheet (PDF)
nce6009as.pdf
Pb Free Producthttp://www.ncepower.com NCE6009ASNCE N-Channel Enhancement Mode Power MOSFET Description The NCE6009AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =9A Schematic diagram RDS(ON)
nce6009xs.pdf
http://www.ncepower.comNCE6009XSNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE6009XS uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V = 60V,I =9ADS DSchematic diagramR
nce6008as.pdf
Pb Free Producthttp://www.ncepower.com NCE6008ASNCE N-Channel Enhancement Mode Power MOSFET Description The NCE6008AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =8A Schematic diagram RDS(ON)
nce6003m.pdf
Pb Free Producthttp://www.ncepower.com NCE6003MNCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE6003M uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. SGeneral Feature Schematic diagram
nce6003.pdf
Pb Free Producthttp://www.ncepower.com NCE6003NCE N-Channel Enhancement Mode Power MOSFET DDescription The NCE6003 uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. SSchematic Diagram General Features
nce6004.pdf
http://www.ncepower.comNCE6004NCE N-Channel Enhancement Mode Power MOSFETDDescriptionGThe NCE6004 uses advanced trench technology to provideexcellent R , low gate charge. This device is suitable forDS(ON)use as a Battery protection or in other switching application.SSchematic DiagramGeneral Features V =60V,I =4ADS DR
nce6005as.pdf
Pb Free Producthttp://www.ncepower.com NCE6005ASNCE N-Channel Enhancement Mode Power MOSFET Description The NCE6005AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Schematic diagram General Features VDS=60V,ID=5A RDS(ON)
nce6007s.pdf
Pb Free Producthttp://www.ncepower.com NCE6007SNCE N-Channel Enhancement Mode Power MOSFET Description The NCE6007S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =7A Schematic diagram RDS(ON)
nce6005an.pdf
NCE6005ANhttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE6005AN uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =5ADS DR
nce6003xm.pdf
http://www.ncepower.comNCE6003XMNCE N-Channel Enhancement Mode Power MOSFETDescriptionDThe NCE6003XM uses advanced trench technology to provideexcellent R , low gate charge. This device is suitable forDS(ON)Guse as a Battery protection or in other switching application.SGeneral FeaturesSchematic Diagram V =60V,I =3ADS DR
nce6005ar.pdf
Pb Free Producthttp://www.ncepower.com NCE6005ARNCE N-Channel Enhancement Mode Power MOSFET Description The NCE6005AR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS=60V,ID=5A RDS(ON)
nce6003xy.pdf
http://www.ncepower.comNCE6003XYNCE N-Channel Enhancement Mode Power MOSFETDDescriptionGThe NCE6003XY uses advanced trench technology to provideexcellent R , low gate charge. This device is suitable forDS(ON)use as a Battery protection or in other switching application.SSchematic DiagramGeneral Features V =60V,I =3ADS DR
nce6003y.pdf
Pb Free Producthttp://www.ncepower.com NCE6003YNCE N-Channel Enhancement Mode Power MOSFET DDescription The NCE6003Y uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. SSchematic Diagram General Features
nce6003x.pdf
http://www.ncepower.comNCE6003XNCE N-Channel Enhancement Mode Power MOSFETDDescriptionThe NCE6003X uses advanced trench technology to provideGexcellent R , low gate charge. This device is suitable forDS(ON)use as a Battery protection or in other switching application.SSchematic DiagramGeneral Features V =60V,I =3ADS DR
nce6005as.pdf
NCE6005ASwww.VBsemi.twDual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.040RDS(on) () at VGS = 4.5 V 0.055ID (A) per leg 7Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Channe
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
