FDC8601 Todos los transistores

June 2010 FDC8601 N-Channel Power Trench MOSFET 100 V, 2.7 A, 109 m Features General Description Max rDS(on) = 109 m at VGS = 10 V, ID = 2.7 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 176 m at VGS = 6 V, ID = 2.1 A been optimized for rDS(on), switching performance and High performance trench

May 2013 FDC8602 Dual N-Channel Shielded Gate PowerTrench MOSFET 100 V, 1.2 A, 350 m Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Max rDS(on) = 350 m at VGS = 10 V, ID = 1.2 A incorporates Shielded Gate technology. This process has been Max rDS(on) = 575

May 2013 FDC86244 N-Channel Shielded Gate PowerTrench MOSFET 150 V, 2.3 A, 144 m Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Max rDS(on) = 144 m at VGS = 10 V, ID = 2.3 A incorporates Shielded Gate technology. This process has been Max rDS(on) = 188 m a

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

SMD Type MOSFET N-Channel MOSFET FDC86244 (KDC86244) ( ) SOT-23-6 Unit mm +0.1 0.4 -0.1 Features VDS (V) = 150V 6 5 4 ID = 2.3 A (VGS = 10V) RDS(ON) 144m (VGS = 10V) RDS(ON) 188m (VGS = 6V) 2 3 1 Fast switching speed +0.02 0.15 -0.02 +0.01 -0.01 +0.2 -0.1 4 S G 3 5 D 2 D 6 D D 1 Absolute Maximum Ratings Ta = 25 Paramete

FDC86244 www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET 0.095 at VGS = 10 V 3.2 Low On-Resistance 100 4.2 nC 0.105 at VGS = 4.5 V 3.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC TSOP-6 APPLICATIONS