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NCE60H15AD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE60H15AD
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 220 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 150 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 23 nS
   Cossⓘ - Capacitancia de salida: 609 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
   Paquete / Cubierta: TO263
 

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NCE60H15AD Datasheet (PDF)

 ..1. Size:340K  ncepower
 nce60h15ad.pdf pdf_icon

NCE60H15AD

http://www.ncepower.com NCE60H15ADNCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H15AD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =150A Schematic diagram RDS(ON)

 5.1. Size:351K  ncepower
 nce60h15a.pdf pdf_icon

NCE60H15AD

http://www.ncepower.com NCE60H15ANCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H15A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =150A Schematic diagram RDS(ON)

 5.2. Size:657K  ncepower
 nce60h15at.pdf pdf_icon

NCE60H15AD

http://www.ncepower.com NCE60H15ATNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60H15AT uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =150ADS DR

 6.1. Size:610K  ncepower
 nce60h15t.pdf pdf_icon

NCE60H15AD

http://www.ncepower.com NCE60H15TNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60H15T uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =150ADS DR

MOSTRAR MÁS

Otros transistores... NCE6050KA , NCE6075 , NCE6075K , NCE6080A , NCE6080D , NCE6080K , NCE609 , NCE60H15A , 5N65 , NCE60P04R , NCE60P04Y , NCE60P06S , NCE60P09S , NCE60P10K , NCE60P12K , NCE60P14AK , NCE60P16AK .

History: 4N80L-TMA-T | SNN01Z10D | IRF7534D1 | IRF9620SPBF | SSF12N65F | WMK13N50C4

 

 
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