NCE60P09S Todos los transistores

 

NCE60P09S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE60P09S
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 14 nS
   Cossⓘ - Capacitancia de salida: 112.7 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.038 Ohm
   Paquete / Cubierta: SOP8
 

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NCE60P09S datasheet

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NCE60P09S

NCE60P09S http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P09S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-60V,ID =-9A RDS(ON)

 6.1. Size:288K  ncepower
nce60p09as.pdf pdf_icon

NCE60P09S

NCE60P09AS http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P09AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-60V,ID =-9A RDS(ON)

 6.2. Size:655K  ncepower
nce60p09k.pdf pdf_icon

NCE60P09S

http //www.ncepower.com NCE60P09K NCE P-Channel Enhancement Mode Power MOSFET General Features Description V =-60V,I =-9A DS D The NCE60P09K uses advanced trench technology and design R

 7.1. Size:408K  ncepower
nce60p02y.pdf pdf_icon

NCE60P09S

Otros transistores... NCE6080D , NCE6080K , NCE609 , NCE60H15A , NCE60H15AD , NCE60P04R , NCE60P04Y , NCE60P06S , SI2302 , NCE60P10K , NCE60P12K , NCE60P14AK , NCE60P16AK , NCE60P18AK , NCE60P20K , NCE60P45K , NCE60P50 .

 

 
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