FDC8602 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

FDC8602 datasheet

..1. Size:258K fairchild semi
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May 2013 FDC8602 Dual N-Channel Shielded Gate PowerTrench MOSFET 100 V, 1.2 A, 350 m Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Max rDS(on) = 350 m at VGS = 10 V, ID = 1.2 A incorporates Shielded Gate technology. This process has been Max rDS(on) = 575

8.1. Size:276K fairchild semi
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June 2010 FDC8601 N-Channel Power Trench MOSFET 100 V, 2.7 A, 109 m Features General Description Max rDS(on) = 109 m at VGS = 10 V, ID = 2.7 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 176 m at VGS = 6 V, ID = 2.1 A been optimized for rDS(on), switching performance and High performance trench

9.1. Size:332K fairchild semi
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May 2013 FDC86244 N-Channel Shielded Gate PowerTrench MOSFET 150 V, 2.3 A, 144 m Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Max rDS(on) = 144 m at VGS = 10 V, ID = 2.3 A incorporates Shielded Gate technology. This process has been Max rDS(on) = 188 m a

9.2. Size:397K onsemi
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur