NCE60P18AK MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE60P18AK
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 60 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 18 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.2 V
Carga de la puerta (Qg): 37.6 nC
Tiempo de subida (tr): 14 nS
Conductancia de drenaje-sustrato (Cd): 90.6 pF
Resistencia entre drenaje y fuente RDS(on): 0.065 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de MOSFET NCE60P18AK
NCE60P18AK Datasheet (PDF)
nce60p18ak.pdf
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Pb Free Producthttp://www.ncepower.com NCE60P18AKNCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P18AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-18A RDS(ON)
nce60p18aq.pdf
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NCE60P18AQhttp://www.ncepower.comNCE P-Channel Enhancement Mode Power MOSFETGeneral FeaturesDescription V = -60V,I = -18ADS DThe NCE60P18AQ uses advanced trench technology to provideR
nce60p16aq.pdf
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http://www.ncepower.com NCE60P16AQ NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P16AQ uses advanced trench technology to provide General Features excellent R , This device is suitable for use as a load switch DS(ON) V = -60V,I = -16A DS Dor power management. R
nce60p10k.pdf
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Pb Free Producthttp://www.ncepower.com NCE60P10KNCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. Schematic diagram General Features VDS =-60V,ID =-10A RDS(ON)
nce60p16ak.pdf
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NCE60P16AKhttp://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P16AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. Schematic diagram General Features VDS =-60V,ID =-16A RDS(ON)
nce60p12k.pdf
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Pb Free Producthttp://www.ncepower.com NCE60P12KNCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P12K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-12A RDS(ON)
nce60p12as.pdf
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NCE60P12AShttp://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P12AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-60V,ID =-12A RDS(ON)
nce60p14ak.pdf
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NCE60P14AKhttp://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P14AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. Schematic diagram General Features VDS =-60V,ID =-14A RDS(ON)
nce60p17aq.pdf
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NCE60P17AQhttp://www.ncepower.comNCE P-Channel Enhancement Mode Power MOSFETGeneral FeaturesDescription V = -60V,I = -17ADS DThe NCE60P17AQ uses advanced trench technology to provideR
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