NCE60P18AK MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE60P18AK

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 60 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 18 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 14 nS

Cossⓘ - Capacitancia de salida: 90.6 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.065 Ohm

Encapsulados: TO252

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NCE60P18AK datasheet

 ..1. Size:418K  ncepower
 nce60p18ak.pdf pdf_icon

NCE60P18AK

 5.1. Size:624K  ncepower
 nce60p18aq.pdf pdf_icon

NCE60P18AK

NCE60P18AQ http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET General Features Description V = -60V,I = -18A DS D The NCE60P18AQ uses advanced trench technology to provide R

 7.1. Size:410K  ncepower
 nce60p16aq.pdf pdf_icon

NCE60P18AK

http //www.ncepower.com NCE60P16AQ NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P16AQ uses advanced trench technology to provide General Features excellent R , This device is suitable for use as a load switch DS(ON) V = -60V,I = -16A DS D or power management. R

 7.2. Size:424K  ncepower
 nce60p10k.pdf pdf_icon

NCE60P18AK

Pb Free Product http //www.ncepower.com NCE60P10K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. Schematic diagram General Features VDS =-60V,ID =-10A RDS(ON)

MOSTRAR MÁS

Otros transistores... NCE60P04R, NCE60P04Y, NCE60P06S, NCE60P09S, NCE60P10K, NCE60P12K, NCE60P14AK, NCE60P16AK, IRF2807, NCE60P20K, NCE60P45K, NCE60P50, NCE60P50K, NCE60P55K, NCE65T180D, NCE65T180, NCE65T180F