NCE65T1K2I MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE65T1K2I
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 41 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 4 nS
Cossⓘ - Capacitancia de salida: 18 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.1 Ohm
Paquete / Cubierta: TO251
- Selección de transistores por parámetros
NCE65T1K2I Datasheet (PDF)
nce65t1k2i.pdf

NCE65T1K2K,NCE65T1K2I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 950 m DS(ON)TYP.with low gate charge. This super junction MOSFET fits the ID 4 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industria
nce65t1k2k nce65t1k2i.pdf

NCE65T1K2K,NCE65T1K2I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 950 m DS(ON)TYP.with low gate charge. This super junction MOSFET fits the ID 4 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industria
nce65t1k2i nce65t1k2k.pdf

NCE65T1K2K,NCE65T1K2I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 950 m DS(ON)TYP.with low gate charge. This super junction MOSFET fits the ID 4 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industria
nce65t1k2 nce65t1k2d nce65t1k2f.pdf

NCE65T1K2,NCE65T1K2D,NCE65T1K2F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 950 m DS(ON)TYP.with low gate charge. This super junction MOSFET fits the ID 4 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: CP650 | WM02N08L



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