NCE65T260F Todos los transistores

 

NCE65T260F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE65T260F
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 33.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 15 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 24.7 nC
   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 74 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.26 Ohm
   Paquete / Cubierta: TO220F

 Búsqueda de reemplazo de MOSFET NCE65T260F

 

NCE65T260F Datasheet (PDF)

 ..1. Size:612K  ncepower
nce65t260f.pdf

NCE65T260F
NCE65T260F

NCE65T260D,NCE65T260,NCE65T260F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 220 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 15 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 ..2. Size:612K  ncepower
nce65t260d nce65t260 nce65t260f.pdf

NCE65T260F
NCE65T260F

NCE65T260D,NCE65T260,NCE65T260F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 220 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 15 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 ..3. Size:612K  ncepower
nce65t260f nce65t260 nce65t260d.pdf

NCE65T260F
NCE65T260F

NCE65T260D,NCE65T260,NCE65T260F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 220 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 15 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 5.1. Size:490K  ncepower
nce65t260i nce65t260k.pdf

NCE65T260F
NCE65T260F

NCE65T260I,NCE65T260K, N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 220 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 15 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri

 5.2. Size:1419K  ncepower
nce65t260i.pdf

NCE65T260F
NCE65T260F

NCE65T260I,NCE65T260K,N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 220 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theI 15 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and industrial powe

 5.3. Size:612K  ncepower
nce65t260d.pdf

NCE65T260F
NCE65T260F

NCE65T260D,NCE65T260,NCE65T260F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 220 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 15 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 5.4. Size:1419K  ncepower
nce65t260k.pdf

NCE65T260F
NCE65T260F

NCE65T260I,NCE65T260K,N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 220 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theI 15 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and industrial powe

 5.5. Size:612K  ncepower
nce65t260.pdf

NCE65T260F
NCE65T260F

NCE65T260D,NCE65T260,NCE65T260F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 220 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 15 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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